p2204nd5g Niko Semiconductor Co., Ltd., p2204nd5g Datasheet - Page 3

• Manufacturer Part Number: p2204nd5g
• Description: N- & P-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Niko Semiconductor Co., Ltd.

NIKO-SEM
1
2
REMARK: THE PRODUCT MARKED WITH “P2204ND5G”, DATE CODE or LOT #
Rev 1.3
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Pulse test : Pulse Width  300 sec, Duty Cycle  2%.
Independent of operating temperature.
2
2
1
2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
2
2
N- & P-Channel Enhancement Mode Field
t
t
V
Q
d(on)
Q
d(off)
t
t
t
SD
rr
gd
r
f
rr
Effect Transistor
V
I
I
DS
F
F
I
D
I
= 10A, dl
D
= -7A, dl
= 0.5V
 -1A, V
 1A, V
I
I
F
F
= 10A, V
= -7A, V
GS
GS
N-Channel
V
(BR)DSS
P-Channel
3
I
V
D
DS
DS
F
F
= 10V, R
= -10V, R
/dt = 100A / S
= -7A
/dt = 100A / S
= -20V
= 20V
GS
GS
, V
= 0V
= 0V
GEN
GS
GEN
= -10V,
= 6Ω
= 6Ω
Halogens Free & Lead Free
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
C
= 25 °C)
P2204ND5G
10.8
14.0
17.1
28.7
17.8
3.0
2.7
3.2
9.7
5.3
60
80
43
75
Jul-10-2009
19.4
21.7
28.1
30.8
51.6
10.7
32.2
-1.2
TO-252-5
6.4
1.2
nS
nS
nC
V