ds42585 Advanced Micro Devices, ds42585 Datasheet - Page 34

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ds42585

Manufacturer Part Number
ds42585
Description
Stacked Multi-chip Package Mcp Flash Memory And Sram
Manufacturer
Advanced Micro Devices
Datasheet
DC CHARACTERISTICS (Continued)
CMOS Compatible
Notes:
1. The I
2. Maximum I
3. I
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
5. Not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
34
Parameter
Parameter
Symbol
Symbol
200 nA.
I
I
V
V
V
CC
V
CC1
CC2
V
V
V
I
V
I
I
I
SB1
I
OH1
OH2
LKO
LO
CC
SB
OH
HH
OL
LI
OL
ID
active while Embedded Erase or Embedded Program is in progress.
s
s
CC
current listed is typically less than 2 mA/MHz, with OE# at V
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
Voltage for Sector Protection,
Autoselect and Temporary Sector
Unprotect
Output Low Voltage
Output High Voltage
Flash Low V
(Note 5)
Input Leakage Current
Output Leakage Current
Operating Power Supply Current
Average Operating Current
Average Operating Current
Output Low Voltage
Output High Voltage
Standby Current (TTL)
Standby Current (CMOS)
CC
specifications are tested with V
Parameter Description
Parameter Description
CC
Lock-Out Voltage
CC
P R E L I M I N A R Y
= V
I
V
I
V
I
V
CE1#s = V
V
I
WE# = V
Cycle time = 1 µs, 100% duty,
I
CE2
V
Cycle time = Min., I
100% duty, CE1#s = V
V
I
I
CE1#s = V
inputs = V
CE1#s V
0.2 V (CE1#s controlled) or CE2
0.2 V (CE2s controlled), CIOs =
V
OL
OH
OH
CC
IO
IO
OL
OH
CC min
CC min
IN
IH
IN
IH
SS
max.
= 0 mA, CE1#s = V
= 0 mA, CE1#s
, V
= 4.0 mA, V
= 2.1 mA
= –2.0 mA, V
= –100 µA, V
= –1.0 mA
= V
or WE# = V
or V
V
IN
DS42585
V
CC
SS
Test Conditions
= V
CC
CC
Test Conditions
IH
to V
– 0.2 V
IH
IH
, V
CC
, Other input = 0 ~ V
IH
– 0.2 V, V
IL
, CE2s = V
or V
, CE2 = V
IN
= or V
– 0.2 V, CE2 V
CC
CC
IL
= V
IL
, V
CC
CC
f = V
f = V
IH
IH
IO
IO
= V
IH
0.2 V,
.
IN
= V
or V
= 0 mA,
IL
CC
IL
IL
IL
CC min
, Other
, CE2s =
CC
, CE2s =
s =
SS
or OE# =
0.2 V or
IL
s =
to V
CC
CC
CC
ACC
V
0.85 x
CC
Min
V
8.5
8.5
2.3
–1.0
–1.0
Min
+ 30 ns. Typical sleep mode current is
2.4
CC
–0.4
Typ
Typ
Max
12.5
0.45
Max
9.5
2.5
1.0
1.0
0.4
0.3
40
25
3
5
Unit
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
V

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