sga-9089z RF Micro Devices, sga-9089z Datasheet

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sga-9089z

Manufacturer Part Number
sga-9089z
Description
High Ip3, Medium Power Discrete Sige Transistor
Manufacturer
RF Micro Devices
Datasheet
1.SGA-9089Z.pdf (6 pages)
Product Description
RFMD’s SGA-9089Z is a high performance Silicon Germanium Hetero-
structure Bipolar Transistor (SiGe HBT) designed for operation from
50MHz to 4.0GHz. The SGA-9089Z is optimized for 3V operation. The
device provides excellent linearity at a low cost. It can be operated over a
wide range of currents depending on the power and linearity require-
ments.
EDS-105051 Rev F
Maximum Available Gain, Z
Z
Output Power at 1dB Compression
Output Third Order Intercept Point,
Power Gain, Z
Noise Figure
DC Current Gain
Thermal Resistance
Breakdown Voltage
Device Operating Voltage
Device Operating Current
Test Conditions:V
Optimum Technology
Matching® Applied
L
=Z
Z
Z
LDMOS
L
S
S
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
*
=Z
=Z
SOPT
SOPT
Parameter
[2]
, Z
, Z
S
, Z
=Z
L
L
=Z
=Z
CE
S
[1] 100% production tested with Application Circuit
SOPT
=Z
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
=3V, I
LOPT
LOPT
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
SOPT
, Z
L
, Z
=Z
CE
S
L
=170mA Typ. (unless otherwise noted), T
=Z
LOPT
=Z
S
LOPT
*,
[2]
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
,
SGA-9089Z
High IP
Medium Power
Discrete SiGe
Transistor
24.0
22.0
20.0
18.0
16.0
14.0
12.0
10.0
3
,
0.9
Min.
100
5.7
1.1
1.3
Typical G
Specification
V
CE
Frequency (GHz)
= 3.0V, I
1.5
Typ.
23.2
16.4
15.0
23.7
23.8
18.0
13.0
11.0
G
37.4
37.5
180
3.2
3.1
3.1
6.0
48
MAX
MAX
1.7
CE
, OIP
= 170mA
3
1.9
, P
L
=25°C OIP
1dB
[2] Data with Application Circuit
2.1
OIP
P
Max.
1dB
300
220
3.8
3
2.3
HIGH IP
3
2.5
Tone Spacing=1MHz, P
41
38
35
32
29
26
23
20
°C/W
Unit
dBm
dBm
dBm
dBm
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
3
V
V
, MEDIUM POWER DISCRETE SiGe
880MHz
1960MHz
2440MHz
880MHz and 1960MHz
2440MHz
880MHz
1960MHz and 2440MHz
880MHZ
1960MHz
2440MHz
880MHz
1960MHz
2440MHz
Junction - lead
Collector - Emitter
Collector - Emitter
Collector - Emitter
Features
Applications
OUT
0.05GHz to 4GHz Operation
15.0dB G
P
OIP
3.1dB NF at 2.44GHz
Low Cost, High Performance,
Versatility
Analog and Digital Wireless
Systems
3G, Cellular, PCS, RFID
Fixed Wireless, Pager Sys-
tems
PA Stage for Medium Power
Applications
1dB
[1]
per tone=10dBm
[2]
[2]
3
SGA-9089Z
=+37.5dBm at 2.44GHz
=+23.8dBm at 2.44GHz
Condition
MAX
Package: SOT-89
at 2.44GHz
TRANSISTOR
1 of 6

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sga-9089z Summary of contents

Page 1

... RFMD’s SGA-9089Z is a high performance Silicon Germanium Hetero- structure Bipolar Transistor (SiGe HBT) designed for operation from 50MHz to 4.0GHz. The SGA-9089Z is optimized for 3V operation. The device provides excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity require- ments ...

Page 2

... SGA-9089Z Absolute Maximum Ratings Parameter Device Current ( Base Current ( Device Voltage ( Collector - Base Voltage ( Emitter - Base Voltage ( Input Power* (See Note) Junction Temp ( Operating Temp Range ( Storage Temp ESD Rating - Human Body Model (HBM) ...

Page 3

... RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-105051 Rev F 400 350.0 -10 300.0 -15 Isolation 250.0 -20 200.0 -25 -30 150.0 -35 100.0 -40 50.0 -45 0.0 -50 0.0 0.5 8.0 10.0 S22 versus Frequency S22 Vs. Frequency 5 GHz 2.44 GHz 1.96 GHz 6 GHz .88 GHz .5 GHz .2 GHz 8 GHz .1 GHz SGA-9089Z DCIV Curves 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V (Volts GHz 3.5 GHz 6 GHz 8 GHz 10 GHz .05 GHz ...

Page 4

... SGA-9089Z Pin Function Description input / Base Bias. External DC blocking capacitor required GND Connection to ground. Use via holes to reduce lead inductance. Place via holes as close to lead as possible OUT RF Out / Collector bias. External DC blocking capacitor required. Refer to drawing posted at www.rfmd.com for tolerances. ...

Page 5

... Alternate marking “SGA9089Z” on line one with Trace Code on line two. Part Number SGA-9089Z 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-105051 Rev F Part Identification Ordering Information Reel Size Devices/Reel 7” 1000 SGA-9089Z ...

Page 6

... SGA-9089Z 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com EDS-105051 Rev F ...

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