sga-9089z RF Micro Devices, sga-9089z Datasheet - Page 2
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sga-9089z
Manufacturer Part Number
sga-9089z
Description
High Ip3, Medium Power Discrete Sige Transistor
Manufacturer
RF Micro Devices
Datasheet
1.SGA-9089Z.pdf
(6 pages)
SGA-9089Z
Typical Performance with 2.45GHz Application Circuit
2 of 6
Absolute Maximum Ratings
Device Current (I
Base Current (I
Device Voltage (V
Collector - Base Voltage (V
Emitter - Base Voltage (V
RF Input Power* (See Note)
Junction Temp (T
Operating Temp Range (T
Storage Temp
ESD Rating - Human Body Model
Moisture Sensitivity Level
*Note: Load condition Z
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions:V
(MHz)
Freq
2440
880
(HBM)
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
<(T
J
Parameter
-T
L
B
)/R
VCE
)
CE
J
(v)
3.0
3.0
CE
S
)
=5V
)
TH
)
, j-l and T
L
EB
=50Ω
L
I
CB
)
S
)
=180mA Typ.
)
(mA)
170.0
170.0
ICE
L
=T
LEAD
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
(dBm)
P1dB
23.7
23.8
OIP
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3
Tone Spacing=1MHz, P
See Graph
-40.0
Class 1C
Rating
MSL 2
+150
+150
235
2.5
4.5
4.5
12
24
(dBm)
OIP3
37.4
37.5
Maximum Recommended Operational
Operational Limit
(Tj<130°C)
-10.0
Lead Temperature (°C)
Gain
(dB)
20.0
18.0
11.0
Dissipated Power
OUT
Unit
dBm
mA
mA
°C
°C
°C
per tone=10dBm
V
V
V
50.0
S11
(dB)
-18.6
-18.7
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
80.0
S22
(dB)
-18.7
-23.9
110.0
Caution! ESD sensitive device.
T
L
=25°C
140.0
(dB)
NF
3.2
3.1
11.8 - j27.6
ZSOPT
15 - j5.9
(Ω)
EDS-105051 Rev F
16.4 - j14.2
14.2 - j2.8
ZLOPT
(Ω)