fmc10n60e Fuji Electric holdings CO.,Ltd, fmc10n60e Datasheet
fmc10n60e
Manufacturer Part Number
fmc10n60e
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.FMC10N60E.pdf
(5 pages)
FMI10N60E
Super FAP-E
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, I
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Isolation Voltage
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Description
Thermal resistance
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Thermal Characteristics
Features
Maintains both low power loss and low noise
Lower R
More controllable switching dv/dt by gate resistance
Smaller V
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
E
See to 'Avalanche Energy' graph.
AS
limited by maximum channel temperature and avalanche current.
DS
GS
(on) characteristic
ringing waveform during switching
AS
=4A, L=47.7mH, Vcc=60V, R
3
series
G
=50Ω
Symbol
BV
V
I
I
R
g
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
Q
Q
I
V
trr
Qrr
Symbol
Rth (ch-c)
Rth (ch-a)
DSS
GSS
AV
fs
GS
SD
DS
G
GS
GD
DSS
(th)
(on)
Conditions
I
I
V
V
V
I
I
V
V
f=1MHz
V
V
I
R
V
I
V
L=3.05mH, T
I
I
-di/dt=100A/µs, Tch=25°C
D
D
D
D
D
D
F
F
DS
DS
GS
DS
GS
cc
GS
cc
GS
=10A, V
=10A, V
=250µA, V
=250µA, V
=5A, V
=5A, V
=5A
G
=10A
=15Ω
=300V
=300V
=600V, V
=480V, V
=±30V, V
=10V
=10V
=25V
=0V
GS
DS
GS
GS
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : I
Note *5 : I
=25V
=10V
Symbol
V
V
I
I
V
I
E
E
dV/dt
-di/dt
P
T
T
V
T-Pack(L)
=0V, T
=0V
D
DP
AR
ch
stg
DS
DSX
GS
ISO
AS
AR
D
GS
DS
GS
GS
DS
Outline Drawings [mm]
ch
=0V
=V
=0V
=0V
=0V
=25°C
Channel to Ambient
GS
See to the 'Transient Themal impeadance' graph.
1
Test Conditions
Channel to Case
F
F
ch
≤-I
≤-I
=25°C
D
D
, -di/dt=100A/μs, Vcc≤BV
, dv/dt=4.4kV/μs, Vcc≤BV
T
T
N-CHANNEL SILICON POWER MOSFET
ch
ch
=25°C
=125°C
Characteristics
-55 to + 150
DSS
DSS
, Tch≤150°C.
, Tch≤150°C.
16.5
1.67
600
600
±40
±30
100
165
150
±10
416
4.4
10
2
min.
min.
600
2.5
10
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Equivalent circuit schematic
0.675
1800
kVrms
10.5
10.5
13.5
0.86
0.51
kV/µs
typ.
100
typ.
140
3.0
5.4
A/µs
Unit
10
12
20
18
47
mJ
mJ
9
°C
°C
-
-
-
-
V
V
A
A
V
A
W
Gate(G)
FUJI POWER MOSFET
max.
0.758
2700
max.
0.79
13.5
70.5
1.30
75.0
250
100
210
150
3.5
25
16
30
27
16
20
-
-
-
-
-
t = 60sec, f = 60Hz
Drain(D)
Source(S)
V
Remarks
Ta=25°C
Tc=25°C
GS
Note*1
Note*2
Note*3
Note*4
Note*5
= -30V
°C/W
°C/W
Unit
Unit
µA
nA
pF
nC
µS
µC
ns
Ω
V
V
S
A
V
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fmc10n60e Summary of contents
Page 1
FMI10N60E 3 Super FAP-E series Features Maintains both low power loss and low noise Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage ...
Page 2
FMI10N60E Allowable Power Dissipation PD=f(Tc) 200 180 160 140 120 100 ° Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 µ ...
Page 3
FMI10N60E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 2.5 2.0 1.5 max. 1.0 0.5 0.0 -50 - Tch [ C] ° Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25 ° Vcc= 120V 300V 12 480V ...
Page 4
FMI10N60E Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=10A 600 500 I =4A AS 400 I =6A 300 AS 200 I =10A AS 100 starting Tch [ ° Transient Thermal Impedance Zth(ch-c)=f(t):D ...
Page 5
FMI10N60E 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be ...