fmc10n60e Fuji Electric holdings CO.,Ltd, fmc10n60e Datasheet - Page 3

• Manufacturer Part Number: fmc10n60e
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

FMI10N60E
0.01
100
2.5
2.0
1.5
1.0
0.5
0.0
0.1
20
18
16
14
12
10
10
8
6
4
2
0
1
0.00
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
-50
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25
10
-25
0.25
20
0
µ
s pulse test,Tch=25
0.50
30
25
VSD [V]
Tch [
Qg [nC]
0.75
40
50
max.
480V
Vcc= 120V
°
C]
°
300V
C
50
75
1.00
typ.
°
C
100
60
1.25
125
70
1.50
150
80
3 3
10
10
10
10
10
10
10
10
10
6
5
4
3
2
1
0
3
2
1
0
4
3
2
1
0
10
10
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=15
-50
-1
-2
-25
td(on)
tr
10
-1
0
10
0
tf
td(off)
25
10
VDS [V]
ID [A]
0
Tch [
50
max.
min.
typ.
°
C]
10
75
10
1
FUJI POWER MOSFET
1
µ
Ω
A
100
10
125
2
Coss
Crss
Ciss
10
150
2