mt36vddf12872g-202 Micron Semiconductor Products, mt36vddf12872g-202 Datasheet

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mt36vddf12872g-202

Manufacturer Part Number
mt36vddf12872g-202
Description
1gb, 2gb X72, Ecc, Dr 184-pin Ddr Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR SDRAM RDIMM
MT36VDDF12872 – 1GB
MT36VDDF25672 – 2GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, registered dual in-line memory module
• Tall- and standard-height PCB options
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 1GB (128 Meg x 72) and 2GB (256 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
184-Pin RDIMM Figures
Figure 1:
PDF: 09005aef80772fd2/Source: 09005aef8075ebf6
DDF36C128_256x72.fm - Rev. F 11/07 EN
PCB height: 43.18mm (1.7in)
(RDIMM)
(-40B V
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Tall-Height Layout – 1GB, 2GB
(MO-206-EA)
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Q = +2.6V)
www.micron.com
1GB, 2GB (x72, ECC, DR) 184-Pin DDR RDIMM
1
Figure 2:
Figure 3:
PCB height: 30.48mm (1.2in)
Notes: 1. Contact Micron for industrial temperature
PCB height: 30.48mm (1.2in)
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (166 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. CL = CAS (READ) latency; registered mode
module offerings.
adds one clock cycle to CL.
Standard-Height Layout – 1GB
Standard-Height Layout – 2GB
(MO-206-CA R/C D)
(MO-206-CA R/C D)
A
A
1
≤ +85°C)
≤ +70°C)
©2002 Micron Technology, Inc. All rights reserved.
2
Marking
Features
None
-40B
-335
-262
-26A
-265
G
Y
I

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mt36vddf12872g-202 Summary of contents

Page 1

DDR SDRAM RDIMM MT36VDDF12872 – 1GB MT36VDDF25672 – 2GB For component data sheets, refer to Micron’s Web site: Features • 184-pin, registered dual in-line memory module (RDIMM) • Tall- and standard-height PCB options • Fast data transfer rates: PC2100, PC2700, ...

Page 2

... Part Numbers and Timing Parameters – 1GB Modules Base device: MT46V64M4, Module 2 Part Number Density MT36VDDF12872G-40B__ MT36VDDF12872Y-40B__ MT36VDDF12872G-335__ MT36VDDF12872Y-335__ MT36VDDF12872G-262__ MT36VDDF12872G-26A__ MT36VDDF12872Y-26A__ MT36VDDF12872G-265__ MT36VDDF12872Y-265__ PDF: 09005aef80772fd2/Source: 09005aef8075ebf6 DDF36C128_256x72.fm - Rev. F 11/07 EN 1GB, 2GB (x72, ECC, DR) 184-Pin DDR RDIMM Data Rate (MT/ 2 400 333 266 – ...

Page 3

Table 4: Part Numbers and Timing Parameters – 2GB Modules Base device: MT46V128M4, Module 2 Part Number Density MT36VDDF25672G-40B__ MT36VDDF25672Y-40B__ MT36VDDF25672G-335__ MT36VDDF25672Y-335__ MT36VDDF25672G-262__ MT36VDDF25672G-26A__ MT36VDDF25672Y-26A__ MT36VDDF25672G-265__ MT36VDDF25672Y-265__ Notes: 1. Data sheets for the base devices can be found on Micron’s ...

Page 4

Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 5

Table 6: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0# CKE0, CKE1 RAS#, CAS#, WE# RESET# S0#, S1# SA0–SA2 SCL CB0–CB7 DQ0–DQ63 DQS0–DQ17 SDA DDSPD V REF PDF: 09005aef80772fd2/Source: 09005aef8075ebf6 DDF36C128_256x72.fm ...

Page 6

Functional Block Diagrams Figure 4: Functional Block Diagram – Tall-Height Layout (1GB, 2GB) S1# S0# DQS0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQS9 DQS DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQS1 DQ8 DQ DQ DQ9 DQ10 ...

Page 7

Figure 5: Functional Block Diagram – Standard-Height Layout (1GB) S1# S0# DQS0 DQS CS# DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQS9 DQS DQ DQ4 DQ DQ5 DQ DQ6 DQ7 DQ DQS1 DQS DQ DQ8 DQ9 DQ DQ DQ10 ...

Page 8

Figure 6: Functional Block Diagram – Standard-Height Layout (2GB) S1# S0# DQS0 DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQS9 DQ DQ4 DQ DQ5 DQ DQ6 DQ7 DQ DQS1 DQ DQ8 DQ9 DQ DQ DQ10 DQ11 DQ DQS10 DQ ...

Page 9

General Description The MT36VDDF12872 and MT36VDDF25672 are high-speed, CMOS, dynamic random access 1GB and 2GB memory modules organized in a x72 configuration. These modules use DDR SDRAM devices with four internal banks. DDR SDRAM modules use a double data rate ...

Page 10

Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...

Page 11

I Specifications DD Table 9: I Specifications and Conditions – 1GB DD Values are shown for the MT46V64M4 DDR SDRAM only and are computed from values specified in the 256Mb (64 Meg x 4) component data sheet Parameter/Condition Operating one ...

Page 12

Table 10: I Specifications and Conditions – 2GB DD Values are shown for the MT46V128M4 DDR SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

Page 13

Register and PLL Specifications Table 11: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol high-level IH DC input voltage low-level IL DC input voltage AC high-level ...

Page 14

Table 12: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...

Page 15

Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 16

Module Dimensions Figure 7: 184-Pin RDIMM – Tall-Height Layout (1GB, 2GB U11 U12 2.0 (0.079) R (4X) 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) 1.0 (0.039) TYP U19 U20 U29 U30 ...

Page 17

Figure 8: 184-Pin RDIMM – Standard-Height Layout (1GB 2.0 (0.079) R (4X) U13 U14 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) TYP 1.0 (0.039) TYP 64.77 (2.55) U21 U23 U24 ...

Page 18

Figure 9: 184-Pin RDIMM – Standard-Height Layout (2GB 2.0 (0.079) R (4X) U11 U12 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) TYP 1.0 (0.039) TYP 64.77 (2.55) U21 U23 U22 ...

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