mt48h16m16lfbf-75 Micron Semiconductor Products, mt48h16m16lfbf-75 Datasheet - Page 31

• Manufacturer Part Number: mt48h16m16lfbf-75
• Description: 256mb X16, X32 Mobile Sdram
• Manufacturer: Micron Semiconductor Products

Figure 19: WRITE Burst
Figure 20: WRITE-to-WRITE
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 2/08 EN
Note:
Note:
COMMAND
COMMAND
Data for any WRITE burst may be truncated with a subsequent READ command, and
data for a fixed-length WRITE burst may be immediately followed by a READ command.
Once the READ command is registered, the data inputs will be ignored, and WRITEs will
not be executed. An example is shown in Figure 21 on page 32. Data n + 1 is either the
last of a burst of two or the last desired of a longer burst.
Data for a fixed-length WRITE burst may be followed by, or truncated with, a
PRECHARGE command to the same bank (provided that auto precharge was not acti-
vated), and a continuous page WRITE burst can be truncated with a PRECHARGE
command to the same bank. The PRECHARGE command should be issued
clock edge at which the last desired input data element is registered. The auto precharge
mode requires a
of frequency.
In addition, when truncating a WRITE burst, the DQM signal must be used to mask
input data for the clock edge prior to, and the clock edge coincident with, the
PRECHARGE command. An example is shown in Figure 21 on page 32. Data n + 1 is
either the last of a burst of two or the last desired of a longer burst. Following the
PRECHARGE command, a subsequent command to the same bank cannot be issued
until
ADDRESS
ADDRESS
BL = 2. DQM is LOW.
BL = 2. DQM is LOW. Each WRITE command may be to any bank.
CLK
t
CLK
DQ
DQ
RP is met.
WRITE
BANK,
COL n
WRITE
BANK,
COL n
T0
D
D
T0
n
n
IN
IN
t
WR of at least one clock plus time (see note 24 on page 53), regardless
NOP
n + 1
T1
n + 1
D
NOP
T1
D
IN
IN
DON’T CARE
NOP
T2
WRITE
BANK,
COL b
T2
D
b
IN
31
DON’T CARE
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile SDRAM
©2006 Micron Technology, Inc. All rights reserved
Operations
t
WR after the