mt48h4m16lf Micron Semiconductor Products, mt48h4m16lf Datasheet - Page 42

• Manufacturer Part Number: mt48h4m16lf
• Description: 64mb 4 Meg X 16 Mobile Sdram Features
• Manufacturer: Micron Semiconductor Products

Table 15:
Figure 31:
Table 16:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
Temperature-Compensated Self Refresh
Parameter/Condition
Parameter
Self refresh current:
CKE < 0.2V – 4 banks open
Self refresh current:
CKE < 0.2V – 2 banks open
Self refresh current:
CKE < 0.2V – 1 bank open
Self refresh current:
CKE < 0.2V – 1/2 bank open
Self refresh current:
CKE < 0.2V – 1/4 bank open
Input capacitance: CLK
Input capacitance: All other input-only pins
Input/output capacitance: DQ
I
Notes: 4, 13, 25, and 28; notes appear on page 43 and 44; V
Capacitance
Note: 2; notes appear on page 43
Typical Self Refresh Current vs. Temperature
DD
7 - Self Refresh Current Options
100
90
80
70
60
50
40
30
20
10
0
-50
-40
4-Banks
2-Banks
1-Bank, 1/2 Bank,
1/4 Bank
-30
-20
-10
42
Max Temperature
0
Symbol
C
85ºC
45ºC
85ºC
45ºC
85ºC
45ºC
85ºC
45ºC
85ºC
45ºC
C
C
10
IO
I 1
I2
Temperature (C)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
20
/V
64Mb: 4 Meg x 16 Mobile SDRAM
DD
30
Q = 1.7–1.95V
Min
40
1.5
1.5
3.0
-75/-8
50
Electrical Specifications
180
120
130
100
100
100
80
80
80
80
60
©2006 Micron Technology, Inc. All rights reserved.
Max
70
4.0
4.0
6.0
80
90
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
Units
100
pF
pF
pF