mt46h16m16lf Micron Semiconductor Products, mt46h16m16lf Datasheet - Page 40

• Manufacturer Part Number: mt46h16m16lf
• Description: 256mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 25:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 3/08 EN
Command
Address
Random WRITE Cycles
DQS
CK#
DM
DQ
CK
Notes:
WRITE
Bank,
Col b
T0
1. D
2. b' (or x', n', a', g') = the next data-in following D
3. Programmed BL = 2, 4, or 8 in cases shown.
4. Each WRITE command may be to any bank.
t
DQSS (NOM)
grammed burst order.
IN
b (or x, n, a, g) = data-in for column b (or x, n, a, g).
WRITE
Bank,
Col x
D
T1
b
IN
T1n
D
b'
IN
WRITE
Bank,
Col n
T2
D
x
IN
40
T2n
D
x'
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
Bank,
Col a
T3
D
256Mb: x16, x32 Mobile DDR SDRAM
n
IN
Transitioning data
T3n
D
n'
IN
IN
b (x, n, a, g), according to the pro-
WRITE
Bank,
Col g
T4
D
a
IN
T4n
D
a'
IN
©2005 Micron Technology, Inc. All rights reserved.
T5
D
NOP
Don’t Care
g
IN
T5n
D
Operations
g'
IN