mt46h16m16lf Micron Semiconductor Products, mt46h16m16lf Datasheet - Page 46

• Manufacturer Part Number: mt46h16m16lf
• Description: 256mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 31:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 3/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Odd Number of Data, Interrupting
WRITE
Bank a,
Notes:
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 8 is shown.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. PRE = PRECHARGE command.
6. DQS is required at T4 and T4n to register DM.
7. If the burst of 4 is used, DQS and DM are not required at T3, T3n, T4, and T4n.
D
t
b
WR is referenced from the first positive CK edge after the last data-in pair.
IN
IN
NOP
D
T1
b
b = data-in for column b.
IN
D
b
IN
T1n
NOP
T2
T2n
46
t
NOP
WR
T3
2
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
(a or all)
PRE
Bank
T4
Transitioning data
5
T4n
NOP
T5
©2005 Micron Technology, Inc. All rights reserved.
Don’t Care
T6
NOP
Operations