mt45w4mw16p Micron Semiconductor Products, mt45w4mw16p Datasheet - Page 22

• Manufacturer Part Number: mt45w4mw16p
• Description: Async/page Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Table 11:
PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
Parameter
Address Access Time
Page Access Time
LB#/UB# Access Time
LB#/UB# Disable to High-Z Output
LB#/UB# Enable to Low-Z Output
Maximum CE# Pulse Width
Chip Select Access Time
Chip Disable to High-Z Output
Chip Enable to Low-Z Output
Output Enable to Valid Output
Output Hold from Address Change
Output Disable to High-Z Output
Output Enable to Low-Z Output
Page Cycle Time
Read Cycle Time
READ Cycle Timing Requirements
Notes: 1. High-Z to Low-Z timings are tested with the circuit shown in Figure 15 on page 21. The
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 15 on page 21. The
3. Page-mode enabled only.
Low-Z timings measure a 100mV transition away from the High-Z (V
either V
High-Z timings measure a 100mV transition from either V
OH
or V
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
OL
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AA
APA
BA
BHZ
BLZ
CEM
CO
HZ
LZ
OE
OH
OHZ
OLZ
PC
RC
.
22
Min
10
10
20
70
5
5
-70
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Max
70
20
70
70
20
8
8
8
8
Min
10
10
25
85
5
5
Electrical Characteristics
OH
-85
or V
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Max
OL
85
25
85
85
20
8
8
8
8
toward V
CC
Q/2) level toward
Units
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
2
1
3
2
1
2
1