ap640r7-00 Alpha & Omega Semiconductor, ap640r7-00 Datasheet

ap640r7-00

Manufacturer Part Number

ap640r7-00

Description

24-35 Gaas Mmic High Power Spdt Reflective Switch

Manufacturer

Alpha & Omega Semiconductor

Datasheet

1.AP640R7-00.pdf (2 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AP640R7-00

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Skyworks

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Bonase Electronics (HK) Co., Limited

Part Number:

ap640r7-00LF

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Skyworks

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24–35 GHz GaAs MMIC

High Power SPDT Reflective PIN Switch

Features

I Broad Bandwidth

I Low Loss, < 1.5 dB

I High Isolation, > 28 dB

I Return Loss, < -12 dB

I Fast Switching Speed, < 4 ns

I High Power Handling, 40 dBm Peak,

Description

Alpha’s high power, single pole, double throw PIN diode

switch is a robust, high performance switch. It is ideal for

low loss, high isolation applications, particularly where

broad bandwidths and high power handling is required.

The chip uses Alpha’s proven PIN diode technology, and

is based upon MBE layers for the highest uniformity and

repeatability. The diodes employ surface passivation to

ensure a rugged, reliable part with through-substrate via

holes and gold-based backside metallization to facilitate

an epoxy die attach process. The GaAs MMIC employs

a specialized high power PIN diode in each arm and an

on-chip bias network. Chips are measured on a 100%

basis at 24, 28, 31 and 35 GHz for insertion loss, isolation,

input and output return losses, and also at DC for diode

breakdown voltage and turn on voltage.

Electrical Specifications at 25°C

1. Not measured on a 100% basis.

2. Typical represents the median parameter value across the specified

Insertion Loss

Isolation

Input Return Loss

Output Return Loss (Insertion State)

Leakage Current

Switching Speed

Output Power at 1 dB Compression

frequency range for the median chip.

36 dBm CW

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

Parameter

Specifications subject to change without notice. 2/00A

Symbol

ISO

1 dB

Chip Outline

Dimensions indicated in mm.

All pads are ≥ 0.07 mm wide.

Chip thickness = 0.1 mm.

Absolute Maximum Ratings

Operating Temperature

Storage Temperature

DC Reverse Bias

DC Forward Bias

0.000

1.100

F = 24, 28, 31, 35 GHz

V = -50 V

F = 35 GHz

Condition

Characteristic

Min.

Typ.

1.2

-55°C to +125°C

-65°C to +150°C

+2.6 V (100 mA)

-100 V (-20 mA)

AP640R7-00

Value

15 W

Max.

1.5

Unit

dBm

0.988

0.398

µA

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ap640r7-00 Summary of contents

Page 1

... F = 24, 28, 31, 35 GHz 24, 28, 31, 35 GHz 24, 28, 31, 35 GHz - GHz 1 dB Specifications subject to change without notice. 2/00A AP640R7-00 0.988 0.398 Value -55°C to +125°C -65°C to +150°C -100 V (-20 mA) +2.6 V (100 mA Min. Typ. Max. Unit 1 ...

Page 2

... Specifications subject to change without notice. 2/00A 0 Insertion Loss -10 Input Return Loss Output Return Loss -20 -30 Isolation -40 -26.0 -5.0 -3.5 -1.0 Reverse Bias Voltage (V) Performance vs. DC Bias GHz, Forward Current = + + AP640R7- 0.0 J – Insertion Loss Isolation ...

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