lmx2337 National Semiconductor Corporation, lmx2337 Datasheet - Page 5

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lmx2337

Manufacturer Part Number
lmx2337
Description
Pllatinum? Dual Frequency Synthesizer For Rf Personal Communications
Manufacturer
National Semiconductor Corporation
Datasheet

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I
I
V
V
t
I
t
t
t
t
D o -TRI
D o -TRI
CS
CH
CWH
CWL
ES
EW
Symbol
Electrical Characteristics
V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for which
the device is intended to be functional, but do not guarantee specific performanced limits. For guaranteed specifications and test conditions, see the Electrical Char-
acteristics. The guaranteed specifications apply only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD rating
be done at ESD protected workstations.
Note 3: See PROGRAMMABLE MODES for I
Note 4: Clock, Data and LE does not include f
OH
OL
Typical Performance Characteristics
ICC vs V
LMX2335/37
CC
= 5.0V, V
CC
Charge Pump
TRI-STATE
CURRENT
Charge Pump
TRI-STATE
CURRENT
High-Level Output Voltage
Low-Level Output Voltage
Data to Clock Setup Time
Data to Clock Hold Time
Clock Pulse Width High
Clock Pulse Width Low
Clock to Load Enable Set Up Time
Load Enable Pulse Width
p
= 5.0V; T
A
= 25˚C, except as specified
Parameter
LMX2335
LMX2336
LMX2337
CP o
IN
1, f
description.
IN
2 and OSC
(Continued)
DS012332-19
in
.
0.5V
T = 25˚C
0.5V
T = 25˚C
I
I
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
See Data Input Timing
OH
OL
I
LMX2336
CC
5
= 500 µA
= −500 µA
<
vs V
2 keV and is ESD sensitive. Handling and assembly of this device should only
V
V
D o
D o
Conditions
CC
V
V
p
p
− 0.5V
− 0.5V
V
−5.0
Min
CC
0.4
50
10
50
50
50
50
Value
Typ
±
5
DS012332-20
Max
www.national.com
5.0
0.4
Units
nA
nA
ns
ns
ns
ns
ns
ns
V
V

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