tff1015hn NXP Semiconductors, tff1015hn Datasheet - Page 5

• Manufacturer Part Number: tff1015hn
• Description: Integrated Mixer Oscillator Pll For Satellite Lnb
• Manufacturer: NXP Semiconductors

NXP Semiconductors
11. Thermal characteristics
Table 6.
12. Characteristics
Table 7.
V
TFF1015HN_N1
Product data sheet
Symbol
R
Symbol
I

NF
G
G
s
s
IP3
P
V
V
R
CC
CC
11
22
n(itg)
L(1dB)
IL(HB)
IH(HB)
th(j-c)
pd(HB)
conv
SSB
conv
O
= 5 V; T
Thermal characteristics
Characteristics
amb
Parameter
thermal resistance from junction to case
Parameter
supply current
integrated phase noise density
single sideband noise figure
conversion gain
conversion gain variation
input reflection coefficient
output reflection coefficient
output third-order intercept point
output power at 1 dB gain
compression
low level input voltage on pin HB
high level input voltage on pin HB
pull down resistance on pin HB
= 25

C; f
LO
= 9.75 GHz or 10.6 GHz; f
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 September 2011
xtal
Conditions
RF input and IF output AC coupled
integration offset frequency =
10 kHz to 13 MHz;
loop bandwidth = crossover bandwidth
measured at low band f
and high band f
measured at low band f
and high band f
over whole IF band
in every 36 MHz band
f
f
Z
carrier power is 10 dBm (measured at
the output)
RF
IF_OUT
0
= 25 MHz; Z
= 75 
= 10.7 GHz to 12.7 GHz
= 950 MHz to 2150 MHz;
Integrated mixer oscillator PLL for satellite LNB
0
IF
IF
= 50
= 1625 MHz
= 1625 MHz

IF
IF
unless otherwise specified.
= 1450 MHz
= 1450 MHz
Conditions
TFF1015HN/N1
Min Typ Max Unit
-
-
-
-
-
-
-
-
-
-
-
2.0
80
© NXP B.V. 2011. All rights reserved.
Typ
35
2.0
-
-
110 140 k
52
1.5
7
39
0.5
10 -
10 -
15
6
-
-
-
-
-
-
-
0.8
-
-
Unit
K/W
mA
RMS
dB
dB
dB
dB
dB
dB
dBm
dBm
V
V
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