nb3n508s ON Semiconductor, nb3n508s Datasheet - Page 5

• Manufacturer Part Number: nb3n508s
• Description: 3.3v, 216 Mhz Pureedge Vcxo Clock Generator With Mlvds Output
• Manufacturer: ON Semiconductor

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
7. CLK/CLK loaded with 50 W receiver termination resistor between diff. pair.
8. Measured differentially (CLK − CLK) at 10% to 90%; R
Table 5. AC CHARACTERISTICS
f
f
F
F
t
t
t
CLKIN
CLKOUT
DUTY_CYCLE
R
F
P
NOISE
Symbol
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Crystal Input Frequency
Output Clock Frequency
Phase−Noise Performance f
Spurious Noise Components
Crystal Pullability 0 V v V
Output Clock Duty Cycle (Measured at Crosspoint)
Output Rise Time (CLK/CLK) (Note 8)
Output Fall Time (CLK/CLK) (Note 8)
Figure 3. Typical Phase Noise Plot (V
Phase Noise 10.00dB/Ref −20.00dBc/Hz
(V
DD
IN
Characteristic
CLKOUT
= 3.135 V to 3.465 V, GND = 0 V, T
v 3.3 V
= 216 MHz
@ 100 kHz Offset from Carrier
@ 10 MHz Offset from Carrier
@ 100 Hz Offset from Carrier
@ 10 kHz Offset from Carrier
L
@ 1 MHz Offset from Carrier
OFFSET FREQUENCY (Hz)
http://onsemi.com
@ 1 kHz Offset from Carrier
= 50 W.
DD
5
= 3.3 V, V
A
IN
= 0°C to +70°C, Note 7)
= 0 V; Room Temperature)
"100
Min
45
−105
−106
−120
−145
Typ
216
−80
−88
−60
380
380
27
50
Max
500
500
55
dBc/Hz
dBc/Hz
MHz
MHz
Unit
ppm
ps
ps
%