nb3n853501e ON Semiconductor, nb3n853501e Datasheet - Page 4

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nb3n853501e

Manufacturer Part Number
nb3n853501e
Description
3.3 V Lvttl/lvcmos 2 1 Mux To 4 Lvpecl Differential Clock Fanout Buffer Outputs With Clock Enable And Clock Select
Manufacturer
ON Semiconductor
Datasheet
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
5. Outputs terminated 50 W to V
Table 5. DC CHARACTERISTICS
VOUT
Symbol
V
V
I
V
V
I
I
EE
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
IH
OH
IL
OL
IH
IL
SWING
Power Supply Current
Input HIGH Voltage
Input LOW Voltage
Input High Current (V
Input LOW Current (V
Output HIGH Voltage
Output LOW Voltage
Output Voltage Swing (peak−to−peak)
CC
− 2.0 V, see Figure 4. Input levels of 0.8 V and 2.4 V unless stated otherwise.
CC
CC
V
CC
= V
= 3.456 V; V
= 3.3 ±5% V (3.135 to 3.465 V), GND = 0 V, T
in
= 3.456 V)
Characteristic
in
= GND)
http://onsemi.com
4
CLK_EN CLK_SEL
CLKx, CLK_SEL
CLKx, CLK_SEL
CLK0 CLK1
CLK_EN
CLK_EN
A
= −40°C to +85°C (Note 5)
V
V
−150
−0.3
−0.3
Min
CC
1.4
CC
2.0
0.6
−5
2
Typ
V
V
V
Max
150
CC
0.3
1.3
0.8
CC
0.9
CC
1.7
1.0
50
5
+
Unit
mA
mA
mA
V
V
V
V
V

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