74hct3g04dp NXP Semiconductors, 74hct3g04dp Datasheet - Page 2

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74hct3g04dp

Manufacturer Part Number
74hct3g04dp
Description
Inverters Gates
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
FEATURES
QUICK REFERENCE DATA
GND = 0 V; T
Notes
1. C
2. For HC3G04 the condition is V
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
2003 Oct 30
t
C
C
PHL
SYMBOL
Wide supply voltage range from 2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 8 pins package
Output capability: standard
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
I
PD
Inverter
P
f
f
C
V
N = total switching outputs;
For HCT3G04 the condition is V
L = LOW voltage level.
i
o
/t
D
CC
PD
= input frequency in MHz;
L
PLH
= output frequency in MHz;
(C
= output load capacitance in pF;
= C
is used to determine the dynamic power dissipation (P
= supply voltage in Volts;
L
PD
V
amb
CC
propagation delay nA to nY
input capacitance
power dissipation capacitance per buffer
V
2
CC
= 25 C; t
f
2
o
) = sum of outputs.
f
i
INPUT
nA
N +
r
H
PARAMETER
L
= t
f
(C
6.0 ns.
I
L
= GND to V
I
= GND to V
V
CC
2
f
o
CC
) where:
CC
.
1.5 V.
C
notes 1 and 2
L
2
= 50 pF; V
DESCRIPTION
The 74HC3G/HCT3G04 is a high-speed Si-gate CMOS
device and is pin compatible with low power Schottky
TTL (LSTTL). Specified in compliance with JEDEC
standard no. 7.
The 74HC3G/HCT3G04 provides three inverting buffers.
CONDITIONS
D
in W).
CC
= 4.5 V 8
74HC3G04; 74HCT3G04
OUTPUT
1.5
9
HC3G04
nY
H
L
TYPICAL
Product specification
10
1.5
9
HCT3G04
ns
pF
pF
UNIT

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