m48t35 STMicroelectronics, m48t35 Datasheet - Page 15

• Manufacturer Part Number: m48t35
• Description: 5v, 256 Kbit 32 Kb X 8 Timekeeper Sram
• Manufacturer: STMicroelectronics

3.6
Figure 8.
Figure 9.
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1µF (as shown in
on page
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
schottky diode from V
CC
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
16) is recommended in order to provide the needed filtering.
-100
ppm
-20
-40
-60
-80
20
0
Clock calibration
Crystal accuracy across temperature
0
5
CC
10
F
F = -0.038
to V
15
SS
(cathode connected to V
T
20
0
ppm
= 25 C
C
2
25
(T - T
CC
CC
30
that drive it to values below V
0
)
bus. These transients can be reduced if
2
35
10%
40
45
CC
CC
50
, anode to V
bus. The energy stored in the
55
60
SS
SS
65
AI02124
by as much as
). Schottky diode
70
Figure 10
C
AI00594B
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