tda8512j-n1 NXP Semiconductors, tda8512j-n1 Datasheet - Page 17
tda8512j-n1
Manufacturer Part Number
tda8512j-n1
Description
26 W Btl And 2 X 13 W Se Or 4 X 13 W Se Power Amplifier
Manufacturer
NXP Semiconductors
Datasheet
1.TDA8512J-N1.pdf
(24 pages)
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Philips Semiconductors
2001 Nov 16
handbook, halfpage
handbook, halfpage
26 W BTL and 2
4
SE mode.
(1) R
(2) R
Fig.17 Power dissipation as a function of output
SE mode.
V
P
Fig.19 Power bandwidth as a function of
(dB)
P
o
(W)
B P
P d
= 8.5 W; THD = 0.5%.
= 15 V; R
10
4
2
0
2
4
10
L
L
13 W SE power amplifier
8
6
4
2
0
= 2 .
= 4 .
0
2
power at V
frequency; no bandpass applied.
L
= 2 .
10
4
1
P
= 15 V.
1
(2)
8
13 W SE or
10
12
f i (kHz)
Po (W)
MGW447
MGW445
(1)
10
16
2
17
handbook, halfpage
handbook, halfpage
SE mode.
(1) R
(2) R
Fig.18 Power dissipation as a function of supply
(W)
BTL mode.
V
P
Fig.20 Power bandwidth as a function of
P d
(dB)
P
o
B P
= 17 W; THD = 0.5%.
= 15 V; R
12
10
8
6
4
2
0
L
L
4
2
0
2
4
10
= 2 .
= 4 .
5
voltage.
2
frequency; no bandpass applied.
L
= 4 .
10
1
10
1
Preliminary specification
15
10
V P (V)
TDA8512J
f i (kHz)
MGW446
MGW448
(1)
(2)
20
10
2
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