MC80364K64L MOSYS, MC80364K64L Datasheet

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MC80364K64L

Manufacturer Part Number
MC80364K64L
Description
4Mb (64KX64) Pbsram
Manufacturer
MOSYS
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC80364K64L-10
Manufacturer:
MOSYS
Quantity:
20 000
______________________________________________
Overview
The MoSys MC80364K64 is a high performance,
low power pipeline-burst-SRAM (PBSRAM). Fabri-
cated using an advanced low power, high perform-
ance CMOS process, the MoSys MC80364K64 is
pin and function compatible with industry standard
32Kx64 PBSRAM specification.
The MoSys MC80364K64 supports PBSRAM oper-
ating modes at maximum burst frequency including
indefinite pipeline read or write (3-1-1-1-1-1-1...)
Available
MC80364K64 is packaged in a standard 128 lead
LQFP.
DS10 Rev 1.4 – 12/29/98
High performance
Low power
Compatibility
Applications
High performance, low power pipeline burst SRAM
Ultra low power single chip 512Kbyte Cache
for green PC and battery powered PC
83-133MHz Speed grades
3-1-1-1 Burst Read
1-1-1-1 Burst Write
3-1-1-1-1-1-1-1... pipeline operation
Low active power
Ultra low power ZZ standby mode
Single 3.3V supply (V
Isolated 3.3V or 2.5V I/O supply (V
Individual Byte Write and Global Write masking
Interleave and burst address support
Three chip enables for easy expansion
Industry standard 128-Pin PBSRAM pinout
Industry standard PBSRAM specification
Pentium
Ideal for high speed, low power communica-
tions buffers
Power sensitive portable and DSP applications
in
®
64Kx64
and PowerPC
© 1998 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086
capacity,
DD
)
pipelined L2 Cache
the
DDQ
)
MoSys
Sleep Mode
MoSys x64 Pipeline Burst Cache supports sleep
mode (ZZ).
Low Power
The MC80364K64 affords systems dramatic power
savings due to the benefits of it’s proprietary Mo-
Sys technology. Peak operating power of typical
PBSRAM is 7x that of MC8036K64. Making it ideal
for portable applications, as well as applications
requiring a large amount of RAM.
Part Number Designation
Example : MC80364K64L-10
Device Designation: MC8 , Series: 03
Organization: 64K64
Package Type: L=LQFP
Speed: –10 = 100 MHz
VDDQ - 102
DQ30 - 100
DQ31 - 101
VSSQ - 65
VDDQ - 77
VDDQ - 89
DQ10 - 76
VSSQ - 78
DQ11 - 79
DQ12 - 80
DQ13 - 81
DQ14 - 82
DQ15 - 83
DQ16 - 84
DQ17 - 85
DQ18 - 86
DQ19 - 87
DQ20 - 88
VSSQ - 90
DQ21 - 91
DQ22 - 92
DQ23 - 93
DQ24 - 94
DQ25 - 95
DQ26 - 96
DQ27 - 97
DQ28 - 98
DQ29 - 99
DQ0 - 66
DQ1 - 67
DQ2 - 68
DQ3 - 69
DQ4 - 70
DQ5 - 71
DQ6 - 72
DQ7 - 73
DQ8 - 74
DQ9 - 75
Low Power 3.3V/2.5V
LQFP -- 14 mm x 20 mm x 1.4 mm
128 Lead Plastic Quad Flat Pack
Figure 1. Pin Function
64Kx64 PBSRAM
MC80364K64
38 - VDDQ
37 - DQ63
36 - DQ62
35 - DQ61
34 - DQ60
33 - DQ59
32 - DQ58
31 - DQ57
30 - DQ56
29 - DQ55
28 - DQ54
27 - DQ53
26 - VSSQ
25 - VDDQ
24 - DQ52
23 - DQ51
22 - DQ50
21 - DQ49
20 - DQ48
19 - DQ47
18 - DQ46
17 - DQ45
16 - DQ44
15 - DQ43
14 - VSSQ
13 - VDDQ
12 - DQ42
11 - DQ41
10 - DQ40
9 - DQ39
8 - DQ38
7 - DQ37
6 - DQ36
5 - DQ35
4 - DQ34
3 - DQ33
2 - DQ32
1 - VSSQ
Page 1

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MC80364K64L Summary of contents

Page 1

... Sys technology. Peak operating power of typical PBSRAM is 7x that of MC8036K64. Making it ideal for portable applications, as well as applications requiring a large amount of RAM. Part Number Designation the MoSys Example : MC80364K64L-10 Device Designation: MC8 , Series: 03 Organization: 64K64 Package Type: L=LQFP Speed: –10 = 100 MHz MC80364K64 64Kx64 PBSRAM ...

Page 2

... V ih Input High Voltage V il Input Low Voltage Ts Storage Temperature Notes: Max Vih is not to exceed maximum VDDQ DS10 Rev 1.4 – 12/29/98 © 1998 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 Low Power 3.3V/2.5V 64Kx64 PBSRAM Symbol Type Description A[15:0] Input Processor Addresses ...

Page 3

... Sleep mode, clock stopped, all inputs > 2.8 v, VCC = max DDZZ Table 6. Maximum DC Current Requirements Symbol C Input Pin Capacitance I C I/O Pin Capacitance I/O DS10 Rev 1.4 – 12/29/98 © 1998 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 Low Power 3.3V/2.5V Condition Min 3.3V +10%/-5% 3.135 2.5V +44%/-5% 2.375 1.7 -0 ...

Page 4

... GW#, BWx# setup tWH GW#, BWx# hold tZZs ZZ standby tZZREC ZZ recovery NOTE: V DDQ = 2.5V (+44%/-5%), 3.3V (+10%/-5%) DS10 Rev 1.4 – 12/29/98 © 1998 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 Low Power 3.3V/2.5V -7R5 -8R5 (133 MHz) (117 MHz) (100 MHz) Min Max ...

Page 5

... CE3# tOEQ OE# tOELZ Data-Out tKQLZ tKQ Data-In DS10 Rev 1.4 – 12/29/98 © 1998 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 Low Power 3.3V/2.5V Burst Read tKC tKH tKL ADSP# is blocked by CE1# inactive tADSH ADSC# initiated read Suspend Burst RD2 ...

Page 6

... CE2 tCES tCEH CE3# OE# Data-Out tDS Data-In 1a DS10 Rev 1.4 – 12/29/98 © 1998 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 Low Power 3.3V/2.5V Burst Write Write tKC tKH tKL ADSP# is blocked by CE1# inactive tADSH ADSC# initiated write tAAH ADV# Must be inactive for ADSP# write ...

Page 7

... CE3# tOEQ OE# tOELZ Data-Out tKQLZ tKQ Data-In DS10 Rev 1.4 – 12/29/98 © 1998 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 Low Power 3.3V/2.5V Single Write Burst Read ADSP# is blocked by CE1# inactive tADSS tADSH ADSC# initiated read WR1 RD2 tWS ...

Page 8

... CE2 tCES tCEH CE3# OE# tOELZ Data-Out tKQLZ tKQ Data-In ZZ DS10 Rev 1.4 – 12/29/98 © 1998 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 Low Power 3.3V/2.5V Snooze - With Data Retention tKC tKH tKL tAAH tWH tWH tWH RD tOEHZ tOEQ tOEQX ...

Page 9

... VDDQ/2 on the input waveform to the output waveform moving off 20% from its initial to final value VDDQ/2. Figure 6. LQFP Mechanical Characteristics DS10 Rev 1.4 – 12/29/98 © 1998 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086 MC80364K64 Low Power 3.3V/2.5V 64Kx64 PBSRAM Page 9 ...

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