km681002a Samsung Semiconductor, Inc., km681002a Datasheet - Page 3

• Manufacturer Part Number: km681002a
• Description: 128kx8 High Speed Static Ram5v Operating, Revolutionary Pin Out. Operated At Commercial And Industrial Temperature Range.
• Manufacturer: Samsung Semiconductor, Inc.

CAPACITANCE*
* NOTE : Capacitance is sampled and not 100% tested.
KM681002A, KM681002AI
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
RECOMMENDED DC OPERATING CONDITIONS
NOTE: The above parameters are also guaranteed at industrial temperature range.
DC AND OPERATING CHARACTERISTICS
NOTE: The above parameters are also guaranteed at industrial temperature range.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Input/Output Capacitance
Input Capacitance
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
** V
* V
* V
IL
IH
CC
(Min) = -2.0V a.c(Pulse Width 10ns) for I 20mA
(Max) = V
Parameter
Parameter
=5.0V, Temp.=25 C
CC
Supply Relative to V
Item
CC
Parameter
+ 2.0V a.c (Pulse Width 10ns) for I 20mA
(T
A
=25 C, f=1.0MHz)
Commercial
Industrial
SS
Symbol
V
V
SS
I
V
I
I
I
OH1
SB1
I
LO
CC
SB
OH
LI
OL
Symbol
*
V
V
V
V
CC
SS
IH
IL
Symbol
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OUT
OL
OH
OH1
C
C
IN
OUT
IN
I/O
=8mA
=-4mA
IN
=V
=0mA
=-0.1mA
V
=V
IH
IL,
CC
SS
SS
or OE=V
V
-0.2V or V
to V
IN
to V
=V
CC
V
Symbol
-0.5*
Min
IH
IN
(T
CC
4.5
2.2
Test Conditions
T
V
0
CC
, V
P
T
T
STG
or V
- 3 -
A
IH
CC
Test Conditions
D
A
A
IH
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
-0.2V,
IN
OUT
or WE=V
IL,
0.2V
V
V
(
T
I/O
IN
A
=0V
=0V
=0 to 70 C)
IL
Typ
5.0
0
-
-
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
-40 to 85
12ns
15ns
20ns
Rating
0 to 70
1.0
MIN
-
-
V
CC
Min
2.4
Max
-2
-2
5.5
0.8
-
-
-
-
-
-
-
+ 0.5**
0
CMOS SRAM
Max
8
6
PRELIMINARY
Max
3.95
170
165
160
0.4
25
2
2
8
-
Unit
W
Ferruary 1998
V
V
C
C
C
Unit
V
V
V
V
Unit
pF
pF
Unit
mA
mA
mA
Rev 4.0
V
V
V
A
A