km68512a Samsung Semiconductor, Inc., km68512a Datasheet - Page 4

• Manufacturer Part Number: km68512a
• Description: 64kx8 Bit Low Power Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
RECOMMENDED DC OPERATING CONDITIONS
Note
1. Commercial Product : T
2. Overshoot : V
3. Undershoot : -3.0V in case of pulse width 30ns
4. Overshoot and undershoot are sampled, not 100% tested
KM68512A Family
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby
Current
(CMOS)
Input capacitance
Input/Output capacitance
Supply voltage
Ground
Input high voltage
Input low voltage
Industrial Product : T
Item
KM68512AL/L-L
KM68512ALI/LI-L
CC
Item
+3.0V in case of pulse width 30ns
Item
A
=-40 to 85 C, unless otherwise specified
1)
A
=0 to 70 C, unless otherwise specified
(f=1MHz, T
Symbol
A
I
I
V
V
I
I
I
I
CC1
CC2
SB1
=25 C)
I
LO
CC
SB
OH
LI
OL
Symbol
V
CS
Cycle time=1 s, 100% duty, I
CS
Cycle time=Min, 100% duty, I
I
I
CS
CS
Other inputs =0 ~ Vcc
I
OL
OH
IO
Symbol
IN
C
C
=2.1mA
=Vss to Vcc
1
=0mA, CS
1
=-1.0mA
1
1
Vcc
Vss
IN
IO
V
=V
=V
V
Vcc-0.2V, CS
0.2V, CS
IH
IL
IH
IH
, CS
or CS
2
1
=V
=V
2
2
=V
V
IL
IL
CC
,
, CS
IL
2
Other inputs =V
Test Condition
-0.2V, V
or OE=V
Vcc-0.2V or CS
-0.5
2
Min
Test Conditions
4.5
2.2
=V
V
V
0
IO
IN
IO
3)
IH
4
=0mA, CS
1)
=0V
=0V
, V
IN
IO
IH
IN
=0mA
0.2V or V
or WE=V
=V
IH
IH
1
2
=V
or V
or V
0.2V
IL
, CS
IN
IL
IL
IL
, V
Typ
5.0
Vcc -0.2V
0
-
-
2
Low Power
Low Low Power
Low Power
Low Low Power
=V
IO
=Vss to Vcc
IH
, V
Min
-
-
IN
=V
IH
or V
Vcc+0.5V
IL
Max
CMOS SRAM
5.5
0.8
0
Min Typ Max Unit
Max
2.4
-1
-1
-
-
-
-
-
-
-
-
-
6
8
2)
7
2
1
2
1
-
-
-
-
-
-
-
January 1997
Revision 4.0
100
100
0.4
15
10
70
20
50
1
1
3
Unit
-
Unit
V
V
V
V
pF
pF
mA
mA
mA
mA
V
V
A
A
A
A