tp3022b Freescale Semiconductor, Inc, tp3022b Datasheet

tp3022b

Manufacturer Part Number

tp3022b

Description

Uhf Power Transistor

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.TP3022B.pdf (2 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF Line

UHF Power Transistor

mobile radio band. Use of gold metallization and silicon diffused ballast

resistors results in a medium power output/driver transistor with state–of–the–

art ruggedness and reliability.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS (1)

ON CHARACTERISTICS

DYNAMIC CHARACTERISTICS

FUNCTIONAL TESTS

NOTE:

MOTOROLA RF DEVICE DATA

Total Device Dissipation @ T C = 25 C

Operating Junction Temperature

Storage Temperature Range

Thermal Resistance, Junction to Case (1)

Collector–Emitter Breakdown Voltage

Collector–Emitter Leakage

Emitter–Base Breakdown Voltage

Emitter–Base Leakage

DC Current Gain

Output Capacitance

Common–Emitter Amplifier Power Gain

Collector Efficiency

The TP3022B is designed for common–emitter operation in the 900 MHz

Motorola, Inc. 1994

Specified 26 Volts, 960 MHz Characteristics:

Class AB Operation

Derate above 25 C

(I C = 10 mA, R BE = 75 Ohms)

(V CE = 26 V, R BE = 75 Ohms)

(I C = 5.0 mAdc)

(V BE = 2.5 V)

(I C = 500 mA, V CE = 10 V)

(V CB = 24 V, I E = 0, f = 1.0 MHz)

(V CE = 26 V, P out = 15 W, f = 960 MHz, I Q = 50 mA)

1. Thermal resistance is determined under specified RF operating condition.

Output Power = 15 Watts

Minimum Gain = 8.5 dB

I Q = 50 mA

Characteristic

Rating

Characteristic

(T C = 25 C unless otherwise noted.)

Symbol

R JC

T stg

P D

T J

– 65 to +150

Value

0.167

Max

200

6.0

V (BR)CER

V (BR)EBO

Symbol

I CER

I EBO

G PE

h FE

C ob

Unit

Vdc

C/W

Min

3.5

8.5

—

Typ

CASE 319–07, STYLE 2

—

TP3022B

15 W, 960 MHz

NPN SILICON

TRANSISTOR

UHF POWER

Max

100

5.0

1.0

Order this document

—

by TP3022B/D

TP3022B

Unit

Vdc

—

Related parts for tp3022b

tp3022b Summary of contents

Page 1

... SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor The TP3022B is designed for common–emitter operation in the 900 MHz mobile radio band. Use of gold metallization and silicon diffused ballast resistors results in a medium power output/driver transistor with state–of–the– art ruggedness and reliability. ...

Page 2

... C 0.230 0.260 5.85 6.60 D 0.115 0.125 2.93 3.17 E 0.102 0.114 2.59 2.90 F 0.075 0.085 1.91 2.15 H 0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 2.29 2.79 L 0.725 BSC 18.42 BSC N 0.225 0.241 5.72 6.12 Q 0.125 0.135 3.18 3.42 STYLE 2: PIN 1. EMITTER (COMMON) 2. BASE (INPUT) 3. EMITTER (COMMON) 4. EMITTER (COMMON) 5. COLLECTOR (OUTPUT) 6. EMITTER (COMMON) *TP3022B/D* TP3022B/D MOTOROLA RF DEVICE DATA ...

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