tp3006 Freescale Semiconductor, Inc, tp3006 Datasheet

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tp3006

Manufacturer Part Number
tp3006
Description
Rf Power Transistor Npn Silicon
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
MHz. It incorporates high value emitter ballast resistors, gold metallizations and
offers a high degree of reliability and ruggedness. The TP3006 also features
input and output matching networks and high impedances. It can easily operate
in a full 870– 960 MHz bandwidth in a simple circuit.
REV 6
©
NOTE:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Storage Temperature Range
Operating Junction Temperature
Total Device Dissipation @ T C = 25 C
Thermal Resistance, Junction to Case (1)
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Leakage
DC Current Gain
The TP3006 is designed for cellular radio base station amplifiers up to 960
Motorola, Inc. 1994
Class AB Operation
Specified 26 Volts, 960 MHz Characteristics
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
1. Thermal resistance is determined under specified RF operating condition at temperature test point (see drawing of the package).
Derate above 25 C
(I C = 15 mA, R BE = 75 )
(I E = 4 mAdc)
(I C = 15 mAdc)
(V CE = 26 V, R BE = 75 )
(I C = 0.5 Adc, V CE = 10 Vdc)
Output Power — 5 Watts
Gain — 9 dB min
Efficiency — 45% min
Rating
Characteristic
Characteristic
(T C = 25 C unless otherwise noted.)
Symbol
V CER
V CBO
V EBO
T stg
P D
I C
T J
– 40 to +100
Value
0.14
200
3.5
45
55
25
2
V (BR)CBO
V (BR)CER
V (BR)EBO
Symbol
I CER
h FE
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Adc
C
C
Symbol
R JC
Min
3.5
45
55
15
RF POWER TRANSISTOR
Typ
CASE 319–07, STYLE 2
TP3006
5 W, 870 – 960 MHz
NPN SILICON
Max
7
Max
100
Order this document
4
by TP3006/D
(continued)
TP3006
Unit
Unit
Vdc
Vdc
Vdc
C/W
mA
1

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tp3006 Summary of contents

Page 1

... The RF Line NPN Silicon RF Power Transistor The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3006 also features input and output matching networks and high impedances. It can easily operate in a full 870– ...

Page 2

... FUNCTIONAL TESTS IN 2 TONES 3rd Order Intermodulation ( peak = mA 900 MHz) 5th Order Intermodulation ( peak = mA 900 MHz) Figure 1. Series Equivalent Input and Output Impedances TP3006 25°C unless otherwise noted.) Symbol Min C ob ...

Page 3

... 900 MHz Figure 4. Intermodulation versus Output Power PEAK POWER – IMD 0.1 MHz RF OUTPUT C2 50 3rd ORDER 5th ORDER 100 900 MHz out , OUTPUT POWER (WATTS) TP3006 3 ...

Page 4

... P out , OUTPUT POWER (WATTS) Figure 5. Collector Efficiency versus Output Power INPUT EPOXY GLASS 0 180 PERSTORP DOUBLE SIDE 35 m Cu. Figure 7. 960 MHz Test Circuit Components View TP3006 4 TYPICAL CHARACTERITICS CW – WIDEBAND ...

Page 5

... MAX A 0.965 0.985 24.52 25.01 B 0.355 0.375 9.02 9.52 C 0.230 0.260 5.85 6.60 D 0.115 0.125 2.93 3.17 E 0.102 0.114 2.59 2.90 F 0.075 0.085 1.91 2.15 H 0.160 0.170 4.07 4.31 J 0.004 0.006 0.11 0.15 K 0.090 0.110 2.29 2.79 0.725 BSC 18.42 BSC L N 0.225 0.241 5.72 6.12 Q 0.125 0.135 3.18 3.42 PIN 1. EMITTER (COMMON) 2. BASE (INPUT) 3. EMITTER (COMMON) 4. EMITTER (COMMON) 5. COLLECTOR (OUTPUT) 6. EMITTER (COMMON) TP3006 5 ...

Page 6

... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. ◊ TP3006 6 *TP3006/D* TP3006/D MOTOROLA RF DEVICE DATA ...

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