tda1517atw-n1 NXP Semiconductors, tda1517atw-n1 Datasheet - Page 5

• Manufacturer Part Number: tda1517atw-n1
• Description: 8 W Btl Or 2 X 4 W Se Power Amplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
Note
1. The circuit is DC adjusted at V
2001 Apr 17
V
V
V
ERG
I
I
P
T
T
T
tbf
Supply
V
I
Operating condition
V
I
V
Mute condition
V
V
Standby condition
V
I
OSM
ORM
q
MODE(oper)
stb
P
SYMBOL
SYMBOL
SYMBOL
vj
stg
amb
P
PSC
rp
tot
P
MODE(oper)
O
MODE(mute)
O
MODE(stb)
8 W BTL or 2
= 12 V; T
V
V
OO
OO
o
amb
supply voltage
AC and DC short-circuit-safe voltage
reverse polarity voltage
energy handling capability at outputs V
non-repetitive peak output current
repetitive peak output current
total power dissipation
virtual junction temperature
storage temperature
ambient temperature
supply voltage
quiescent current
mode switch voltage level
mode switch current
DC output voltage
DC output offset voltage
mode switch voltage level
DC output voltage
DC output offset voltage
mode switch voltage level
standby current
= 25 C; measured in Fig.3; unless otherwise specified.
PARAMETER
PARAMETER
PARAMETER
4 W SE power amplifier
P
= 6 to 18 V and AC operating at V
note 1
R
V
P
MODE
L
= 0 V
=
CONDITIONS
CONDITIONS
CONDITIONS
5
= 12 V
P
= 8.5 to 18 V.
6.0
8.5
3.3
0
55
40
MIN.
MIN.
VALUE
12
40
15
5.7
5.7
0.1
TYP.
18
18
6
200
4
2.5
5
150
+150
+85
TDA1517ATW
MAX.
Product specification
18
80
V
40
150
6.4
150
2
100
MAX.
P
UNIT
V
V
V
mJ
A
A
W
C
C
C
UNIT.
V
mA
V
V
mV
V
V
mV
V
A
A
UNIT