saf-xc888cm-8ffi5v Infineon Technologies Corporation, saf-xc888cm-8ffi5v Datasheet - Page 59

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saf-xc888cm-8ffi5v

Manufacturer Part Number
saf-xc888cm-8ffi5v
Description
8-bit Single-chip Microcontroller
Manufacturer
Infineon Technologies Corporation
Datasheet

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3.3
The Flash memory provides an embedded user-programmable non-volatile memory,
allowing fast and reliable storage of user code and data. It is operated from a single 2.5 V
supply from the Embedded Voltage Regulator (EVR) and does not require additional
programming or erasing voltage. The sectorization of the Flash memory allows each
sector to be erased independently.
Features
1) P-Flash: 64-byte wordline can only be programmed once, i.e., one gate disturb allowed.
2) Values shown here are typical values.
3) Values shown here are typical values.
Data Sheet
D-Flash: 32-byte wordline can be programmed twice, i.e., two gate disturbs allowed.
frequency range for Flash read access.
programming and erasing.
In-System Programming (ISP) via UART
In-Application Programming (IAP)
Error Correction Code (ECC) for dynamic correction of single-bit errors
Background program and erase operations for CPU load minimization
Support for aborting erase operation
Minimum program width
1-sector minimum erase width
1-byte read access
Flash is delivered in erased state (read all zeros)
Operating supply voltage: 2.5 V ± 7.5 %
Read access time: 3 ×
Program time: 248256 /
Erase time: 9807360 /
Flash Memory
f
sysmin
f
t
SYS
CCLK
1)
f
SYS
is used for obtaining the worst case timing.
of 32-byte for D-Flash and 64-byte for P-Flash
= 102 ms
= 125 ns
= 2.6 ms
f
sys
f
sys
= 96 MHz ± 7.5% (
= 96 MHz ± 7.5% is the only frequency range for Flash
3)
2)
3)
52
f
CCLK
= 24 MHz ± 7.5 %) is the maximum
Functional Description
XC886/888CLM
V1.1, 2009-01

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