gtl2010 NXP Semiconductors, gtl2010 Datasheet - Page 7

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gtl2010

Manufacturer Part Number
gtl2010
Description
10-bit Gtl Processor Voltage Clamp
Manufacturer
NXP Semiconductors
Datasheet

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1. V
1. All typical values are measured at T
2. Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch.
Philips Semiconductors
RECOMMENDED OPERATING CONDITIONS
NOTE:
ELECTRICAL CHARACTERISTICS OVER RECOMMENDED OPERATING FREE-AIR TEMPERATURE RANGE
(unless otherwise noted)
NOTES:
2004 Jul 28
SYMBOL
SYMBOL
SYMBOL
SYMBOL
C
C
10-bit bi-directional low voltage translator
C
V
V
On-state resistance is determined by the lowest voltage of the two (Sn or Dn) terminals.
V
I
I(GREF)
IO(OFF)
T
V
PASS
V
IO(ON)
GREF
r
r
SREF
DREF
SREF
V
amb
I
on
IH
I/O
OL
IK
2
2
2
2
2
V
DREF
Input/output voltage (Sn, Dn)
DC source reference voltage
DC drain reference voltage
DC gate reference voltage
Pass transistor current
Operating ambient temperature range
LOW level output voltage
Input clamp voltage
Gate input leakage
Gate capacitance
Off capacitance
On capacitance
On resistance
On-resistance
– 1.5 V for best results in level shifting applications.
PARAMETER
PARAMETER
PARAMETER
PARAMETER
amb
= 25 C.
1
V
I
I
V
V
V
V
V
V = 2 4 V
V
V
clamp
I
DD
I
I
O
O
I
I
I
= –18 mA
= 5 V
= 3 V or 0 V
= 0 V
= 2.4 V
= 1.7 V
= 3 V or 0 V
= 3 V or 0 V
= 3.0 V; V
= 15.2 mA
In free air
SREF
TEST CONDITIONS
TEST CONDITIONS
V
V
V
V
V
V
V
V
V
V
V
V
= 1.365 V; V
GREF
GREF
GREF
GREF
GREF
GREF
GREF
GREF
GREF
GREF
GREF
GREF
CONDITIONS
CONDITIONS
= 0 V
= 0 V
= 0 V
= 3 V
= 4.5 V
= 3 V
= 2.3 V
= 1.5 V
= 1.5 V
= 4.5 V
= 3 V
= 2.3 V
7
Sn
or V
I
I
I
I
O
O
O
O
Dn
= 64 mA
= 64 mA
= 30 mA
= 15 mA
= 0.175 V;
Min
–40
0
0
0
0
MIN
LIMITS
LIMITS
TYP
18.6
260
7.4
3.5
4.4
5.5
56
67
58
50
9
7
1
Max
+85
5.5
5.5
5.5
5.5
64
GTL2010
Product data sheet
MAX
–1.2
350
105
15
10
80
70
5
5
7
9
UNIT
UNIT
mA
UNIT
UNIT
V
V
V
V
C
mV
pF
pF
pF
V
A

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