adg733 Analog Devices, Inc., adg733 Datasheet - Page 2

• Manufacturer Part Number: adg733
• Description: Cmos, 2.5
  Low Voltage, Triple/quad Spdt Switches
• Manufacturer: Analog Devices, Inc.

ADG733/ADG734–SPECIFICATIONS
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature range is as follows: B Version: –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match between
On Resistance Flatness (R
Source OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
ADG733 t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
–3 dB Bandwidth
C
C
I
OFF
ON
DD
IN
S
D
Channels (∆R
I
, C
INL
(OFF)
, Digital Input Capacitance
S
or I
(ON)
INH
t
ON
OFF
(EN)
(EN)
ON
ON
)
)
INL
INH
S
D
(OFF)
, I
FLAT(ON)
S
(ON)
2
D
)
+25 C
2.5
4.5
0.5
± 0.01
± 0.1
± 0.01
± 0.1
0.005
4
19
7
20
7
13
± 3
–72
–67
160
11
34
0.001
B Version
–40 C
to +85 C
0 V to V
5.0
0.1
0.4
1.2
± 0.3
± 0.5
2.4
0.8
± 0.1
34
12
40
12
1
1.0
–2–
1
DD
(V
DD
= 5 V
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
µA typ
µA max
10%, V
Test Conditions/Comments
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
R
V
R
V
V
Test Circuit 7
R
Test Circuit 8
R
Test Circuit 9
R
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5.5 V
SS
S
S
S
DD
D
D
IN
L
S
L
S
L
S
L
S
L
S
S
L
L
L
DD
= 0 V, GND = 0 V, unless otherwise noted.)
= 0 V to V
= 0 V to V
= 0 V to V
= 3 V, Test Circuit 4
= 3 V, Test Circuit 4
= 3 V, Test Circuit 5
= 3 V, Test Circuit 5
= 3 V, Test Circuit 6
= 2 V, R
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 4.5 V/1 V, V
= V
= V
= 5.5 V
= 5.5 V
S
INL
= 1 V, or 4.5 V;
or V
S
= 0 Ω, C
L
L
L
DD
DD
DD
L
L
L
L
L
= 5 pF, f = 1 MHz;
= 5 pF, f = 1 MHz;
= 5 pF, Test Circuit 10
INH
, I
, I
, I
= 35 pF;
= 35 pF;
= 35 pF;
= 35 pF;
= 35 pF;
S
DS
DS
DS
= 1 V/4.5 V;
= 10 mA;
= 10 mA
= 10 mA
L
= 1 nF;
REV. A