adg1219 Analog Devices, Inc., adg1219 Datasheet - Page 3

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adg1219

Manufacturer Part Number
adg1219
Description
Low Capacitance, Low Charge Injection, ?15 V/12 V Icmos? Spdt In Sot-23
Manufacturer
Analog Devices, Inc.
Datasheet

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Preliminary Technical Data
SPECIFICATIONS
DUAL SUPPLY
V
Table 1.
Parameters
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
DD
Transition Time, t
t
t
Analog Signal Range
On Resistance (R
On Resistance Match Between
On Resistance Flatness (R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion + Noise
−3 dB Bandwidth
C
C
C
ON
OFF
S
D
D
= 15 V ± 10%, V
, C
(Off)
Channels (∆R
(Off)
(EN)
(EN)
S
(On)
ON
INL
ON
)
TRANSITION
or I
)
D
SS
INL
INH
S
(Off)
INH
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
(Off)
D
, I
S
FLAT(ON)
(On)
2
IN
)
BBM
25°C
120
190
3.5
6
20
60
±0.01
±0.1
±0.01
±0.1
±0.02
±0.2
0.005
2
140
170
85
105
105
125
40
0.1
77
80
0.15
520
2.5
3.3
4.3
5.1
7.5
10
−40°C to +85°C
230
10
72
±0.6
±0.6
±0.6
200
130
150
B Version
Rev. PrB | Page 3 of 17
−40°C to +125°C
V
260
12
79
±1
±1
±1
2.0
0.8
±0.1
230
140
170
10
1
DD
to V
SS
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
% typ
MHz typ
pF typ
pF max
pF typ
pF max
pF typ
pF max
Test Conditions/Comments
V
V
V
V
V
V
V
V
V
R
V
R
V
R
V
R
V
V
see Figure 28
R
see Figure 29
R
see Figure 30
R
R
f = 1 MHz; V
f = 1 MHz; V
f = 1 MHz; V
f = 1 MHz; V
f = 1 MHz; V
f = 1 MHz; V
L
L
L
L
L
L
L
L
S
DD
S
S
DD
S
S
S
IN
S
S
S
S1
S
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz
= 50 Ω, C
= ±10 V, I
= ±10 V, I
= −5 V, 0 V, +5 V; I
= ±10 V, V
= ±10 V, V
= V
= 10 V; see Figure 26
= 10 V; see Figure 26
= 10 V; see Figure 26
= 0 V, R
= V
= V
= +13.5 V, V
= +16.5 V, V
D
INL
S2
= ±10 V; see Figure 25
= 10 V; Figure 27
or V
S
= 0 Ω, C
L
L
L
S
S
S
S
S
S
S
S
S
S
= 5 pF, f = 1 MHz;
= 5 pF, f = 1 MHz;
= 5 pF; see Figure 31
INH
L
L
L
L
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= −1 mA; see Figure 23
= −1 mA
= ±10 V; see Figure 24
= ±10 V; see Figure 24
= 35 pF
= 35 pF
= 35 pF
= 35 pF
SS
SS
= −13.5 V
= −16.5 V
L
= 1 nF;
S
= −1 mA
ADG1219

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