adg1219 Analog Devices, Inc., adg1219 Datasheet - Page 4

• Manufacturer Part Number: adg1219
• Description: Low Capacitance, Low Charge Injection, ?15 V/12 V Icmos? Spdt In Sot-23
• Manufacturer: Analog Devices, Inc.

ADG1219
Parameters
POWER REQUIREMENTS
1
2
SINGLE SUPPLY
V
Table 2.
Parameters
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
Temperature range for B version is −40°C to +125°C.
Guaranteed by design; not subject to production test.
DD
Transition Time, t
t
t
I
I
I
V
Analog Signal Range
On Resistance (R
On Resistance Match Between
On Resistance Flatness (R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
−3 dB Bandwidth
DD
DD
SS
ON
OFF
DD
= 12 V ± 10%, V
Channels (∆R
/V
(EN)
(EN)
SS
INL
ON
ON
TRANSITION
or I
)
)
D
SS
INL
INH
S
(Off)
INH
= 0 V, GND = 0 V, unless otherwise noted.
(Off)
D
, I
S
FLAT(ON)
(On)
2
IN
)
BBM
25°C
300
475
4.5
16
60
±0.01
±0.1
±0.01
±0.1
±0.02
±0.2
0.001
3
195
250
120
150
145
185
70
−0.8
80
80
400
25°C
0.001
140
0.001
−40°C to +85°C
567
26
±0.6
±0.6
±0.6
300
190
220
−40°C to +85°C
B Version
B Version
Rev. PrB | Page 4 of 17
1
−40°C to +125°C
0 V to V
625
27
±1
±1
±1
2.0
0.8
±0.1
340
210
235
10
−40°C to +125°C
1.0
170
1.0
±5/±16.5
1
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
Unit
µA typ
µA max
µA typ
µA max
µA typ
µA max
V min/max
Preliminary Technical Data
Test Conditions/Comments
V
V
V
V
V
V
V
V
V
R
V
R
V
R
V
R
V
V
R
see Figure 29;
R
see Figure 30
R
L
L
L
L
L
L
L
S
DD
S
S
DD
S
S
S
IN
S
S
S
S1
S
Test Conditions/Comments
V
Digital inputs = 0 V or V
Digital inputs = 5 V
Digital inputs = 0 V, 5 V or V
|V
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 0 V to 10 V, I
= 0 V to 10 V, I
= 3 V, 6 V, 9 V, I
= 1 V/10 V, V
= 1 V/10 V, V
= V
= 8 V; see Figure 26
= 8 V; see Figure 26
= 8 V; see Figure 26
= 6 V, R
= V
DD
= V
= 10.8 V, V
= 13.2 V
DD
= +16.5 V, V
D
| = |V
INL
S2
= 1 V or 10 V, see Figure 25
= 8 V; see Figure 27
or V
S
SS
= 0 Ω, C
L
L
L
|
= 5 pF, f = 1 MHz;
= 5 pF, f = 1 MHz;
= 5 pF; see Figure 31
INH
L
L
L
L
= 35 pF
= 35 pF
= 35 pF
= 35 pF
SS
D
D
= 0 V
= 10 V/1 V; see Figure 24
= 10 V/1 V; see Figure 24
S
S
S
SS
= −1 mA; see Figure 23
= −1 mA
= −1 mA
L
= −16.5 V
= 1 nF; see Figure 28
DD
DD