adg1433 Analog Devices, Inc., adg1433 Datasheet - Page 6
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adg1433
Manufacturer Part Number
adg1433
Description
4 ? Ron, Triple/quad Spdt ?15 V/+12 V/?5 V Icmos Switches
Manufacturer
Analog Devices, Inc.
Datasheet
1.ADG1433.pdf
(20 pages)
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ADG1433/ADG1434
5 V DUAL SUPPLY
V
Table 3.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
Temperature range for Y version: −40°C to +125°C.
Guaranteed by design, not subject to production test.
DD
Analog Signal Range
On Resistance (R
On Resistance Match Between
On Resistance Flatness (R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
Transition Time, t
Break-Before-Make Time Delay, t
t
t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion, THD + N
−3 dB Bandwidth
C
C
C
I
I
Input High Voltage, V
V
DD
SS
ON
OFF
S
D
D
DD
= +5 V ± 10%, V
, C
Channels (ΔR
Insertion Loss
(OFF)
(EN)
(OFF)
(EN)
/V
S
SS
(ON)
INL
ON
ON
TRANS
)
or I
)
SS
D
INL
S
INH
(OFF)
= −5 V ± 10%, GND = 0 V, unless otherwise noted.
INH
(OFF)
D
, I
S
FLAT(ON)
(ON)
2
IN
)
D
+25°C
7
9
0.55
0.78
1.5
2.5
±0.02
±0.3
±0.02
±0.3
±0.04
±0.4
±0.005
4
315
430
90
325
425
150
200
−10
−70
−70
0.06
145
0.5
18
32
80
0.002
0.001
−40°C to
+85°C
10.5
0.91
2.5
±0.6
±0.6
±0.8
480
490
225
Rev. 0 | Page 6 of 20
−40°C to
+125°C
V
12
1.1
3
±3
±3
±8
2.0
0.8
±0.1
550
55
545
240
1
1
±4.5/±16.5
SS
to V
DD
1
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns min
ns typ
ns max
ns typ
ns max
pC typ
dB typ
dB typ
% typ
MHz typ
dB typ
pF typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
V min/max
Test Conditions/Comments
V
V
V
V
V
V
V
V
V
R
V
R
V
R
V
R
V
V
R
R
R
R
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital inputs = 0 V, 5 V, or V
Digital inputs = 0 V, 5 V, or V
GND = 0 V
L
L
S
DD
S
S
DD
D
D
S
IN
L
S
L
S1
L
S
L
S
S
L
L
L
DD
= 110 Ω, 5 V p-p, f = 20 Hz to 20 kHz, see Figure 35
= 50 Ω, C
= 100 Ω, C
= 100 Ω, C
= 100 Ω, C
= 100 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= ±4.5 V, I
= ±4.5 V, I
= ±4.5 V, I
= V
= 5 V, see Figure 28
= 5 V, see Figure 30
= 5 V, see Figure 30
= 0 V, R
= ±4.5 V, V
= ±4.5 V, V
= V
= V
= +4.5 V, V
= +5.5 V, V
= +5.5 V, V
D
GND
S2
= ±4.5 V, see Figure 27
= 5 V, see Figure 29
or V
S
= 0 Ω, C
L
L
L
L
= 5 pF, f = 1 MHz, see Figure 33
S
S
S
L
L
L
L
= 5 pF, f = 1 MHz, see Figure 32
= 5 pF, f = 1 MHz, see Figure 34
= 5 pF, see Figure 33
S
S
= −10 mA, see Figure 25
= −10 mA
= −10 mA
DD
SS
SS
= 35 pF
= 35 pF
= 35 pF
= 35 pF
SS
= ±4.5 V, see Figure 26
= ±4.5 V, see Figure 26
= −4.5 V
= −5.5 V
= −5.5 V
L
= 1 nF, see Figure 31
DD
DD