pef80913 Infineon Technologies Corporation, pef80913 Datasheet - Page 147

• Manufacturer Part Number: pef80913
• Description: 2b1q Second Gen. Modular Isdn Nt
• Manufacturer: Infineon Technologies Corporation

Transformer Parameters
Coupling capacitance between the windings on
the device side and the windings on the line side
DC resistance of the windings on device side
DC resistance of the windings on line side
Transmitter
The transmitter requires external resistors R
voltage to the pulse mask (nominal 750 mV according to ITU I.430, to be tested with the
test mode “TM1”) on the one hand and in order to meet the output impedance of
minimum 20
on the other hand.
Note: The resistance of the S-transformer must be taken into account when
•
Figure 69
Data Sheet
SX1
dimensioning the external resistors R
components (e.g. a choke), then the resistance of these additional components
must be taken into account, too.
SX2
External Circuitry S-Interface Transmitter
on the other hand (to be tested with the testmode ’Continuous Pulses’)
20...40
47
47
V
DD
133
stx
. If the transmit path contains additional
stx
Symbol Value
C
R
R
GND
= 47
K
B
L
in order to adjust the output
typ. <100
typ. 2.4
typ. 1.4
Operational Description
PEF 82912/82913
extcirc_S.vsd
DC Point
2 : 1
Unit
pF
2001-03-30