cgd914mi NXP Semiconductors, cgd914mi Datasheet - Page 7

• Manufacturer Part Number: cgd914mi
• Description: Catv Amplifier Module
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 20 dB gain power doubler amplifier
Z
(1) V
(2) Typ. +3 .
Fig.10 Composite triple beat as a function of
Z
(1) V
(2) Typ. +3 .
Fig.12 Composite second order distortion (sum) as
S
S
CSO
CTB
(dB)
(dB)
= Z
= Z
40
50
60
70
80
50
60
70
80
90
o
o
L
L
.
.
0
= 75 ; V
0
= 75 ; V
frequency under tilted conditions.
a function of frequency under tilted
conditions.
200
200
B
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
600
600
(1)
800
800
f (MHz)
f (MHz)
(1)
MCD984
MCD986
(2)
(3)
(4)
(3)
(4)
(2)
1000
1000
(dBmV)
(dBmV)
52
48
44
40
36
52
48
44
40
36
V o
V o
7
handbook, halfpage
handbook, halfpage
Z
(1) V
(2) Typ. +3 .
Fig.11 Cross modulation as a function of frequency
Z
(1) V
(2) Typ. +3 .
Fig.13 Composite second order distortion (diff) as
X mod
S
S
(dB)
CSO
(dB)
= Z
= Z
50
60
70
80
90
50
60
70
80
90
o
o
L
L
.
.
0
= 75 ; V
= 75 ; V
0
under tilted conditions.
a function of frequency under tilted
conditions.
200
200
B
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
CGD914; CGD914MI
400
400
600
600
Product specification
800
800
f (MHz)
f (MHz)
(1)
(1)
(2)
(3)
(4)
MCD985
MCD987
(2)
(3)
(4)
1000
1000
(dBmV)
(dBmV)
52
48
44
40
36
52
48
44
40
36
V o
V o