bgd904mi NXP Semiconductors, bgd904mi Datasheet - Page 6

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bgd904mi

Manufacturer Part Number
bgd904mi
Description
Catv Amplifier Modules
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 20 dB gain power doubler amplifier
Z
tilt = 12.5 dB; (50 to 860 MHz).
(1) V
(2)
Fig.5
Z
tilt = 12.5 dB; (50 to 860 MHz).
(1) V
(2)
Fig.7
S
S
CSO
CTB
(dB)
= Z
(dB)
= Z
50
60
70
80
90
50
60
70
80
90
Typ. +3 .
Typ. +3 .
o
o
L
L
.
.
0
= 75 ; V
0
= 75 ; V
Composite triple beat as a function of
frequency under tilted conditions.
Composite second order distortion as a
function of frequency under tilted
conditions.
200
200
B
B
= 24 V; 129 chs;
= 24 V; 129 chs;
(3)
(4) Typ. 3 .
(3)
(4) Typ. 3 .
Typ.
Typ.
400
400
600
600
800
800
f (MHz)
f (MHz)
MDA931
MDA933
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
1000
1000
(dBmV)
(dBmV)
52
48
44
40
36
52
48
44
40
36
V o
V o
6
handbook, halfpage
Z
tilt = 12.5 dB; (50 to 860 MHz).
(1) V
(2)
Fig.6
X mod
S
(dB)
= Z
50
60
70
80
90
Typ. +3 .
o
L
.
0
= 75 ; V
Cross modulation as a function of frequency
under tilted conditions.
200
B
= 24 V; 129 chs;
(3)
(4) Typ. 3 .
Typ.
BGD904; BGD904MI
400
600
Product specification
800
f (MHz)
MDA932
(1)
(2)
(3)
(4)
1000
(dBmV)
52
48
44
40
36
V o

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