bgd906mi NXP Semiconductors, bgd906mi Datasheet - Page 6

• Manufacturer Part Number: bgd906mi
• Description: Catv Amplifier Modules
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 21.5 dB gain power doubler amplifier
Z
tilt = 12.5 dB (50 to 860 MHz).
(1) V
(2) Typ. +3 .
Fig.5
Z
tilt = 12.5 dB (50 to 860 MHz).
(1) V
(2) Typ. +3 .
Fig.7
S
S
CSO
CTB
(dB)
(dB)
= Z
= Z
50
60
70
80
90
50
60
70
80
90
o
o
L
L
.
.
= 75 ; V
= 75 ; V
0
0
Composite triple beat as a function of
frequency under tilted conditions.
Composite second order distortion as a
function of frequency under tilted
conditions.
200
200
B
B
= 24 V; 129 chs;
= 24 V; 129 chs;
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
600
600
(1)
800
800
f (MHz)
f (MHz)
(2)
(3)
(4)
MGS664
MGS666
(1)
(2)
(3)
(4)
1000
1000
52
(dBmV)
48
44
40
36
52
(dBmV)
48
44
40
36
V o
V o
6
handbook, halfpage
Z
tilt = 12.5 dB (50 to 860 MHz).
(1) V
(2) Typ. +3 .
Fig.6
X mod
S
(dB)
= Z
50
60
70
80
90
o
L
.
= 75 ; V
0
Cross modulation as a function of frequency
under tilted conditions.
200
B
= 24 V; 129 chs;
(3) Typ.
(4) Typ. 3 .
BGD906; BGD906MI
400
600
(1)
Product specification
800
f (MHz)
MGS665
(2)
(3)
(4)
1000
52
(dBmV)
48
44
40
36
V o