74aup1g34gw NXP Semiconductors, 74aup1g34gw Datasheet
74aup1g34gw
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74aup1g34gw Summary of contents
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Low-power buffer Rev. 02 — 4 July 2006 1. General description The 74AUP1G34 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant to ...
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... Ordering information Table 1. Ordering information Type number Package Temperature range Name 74AUP1G34GW +125 C 74AUP1G34GM +125 C 74AUP1G34GF +125 C 4. Marking Table 2. Marking Type number 74AUP1G34GW 74AUP1G34GM 74AUP1G34GF 5. Functional diagram 001aac538 Fig 1. Logic symbol 6. Pinning information 6.1 Pinning 74AUP1G34 n. ...
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Philips Semiconductors 6.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 n. GND n. Functional description [1] Table 4. Function table Input [ ...
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Philips Semiconductors 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter V supply voltage CC V input voltage I V output voltage O T ambient temperature amb t/ V input transition rise and fall rate 10. Static characteristics ...
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Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I input leakage current I I power-off leakage current OFF I additional power-off OFF leakage current I supply current ...
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Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I supply current CC I additional supply current +125 C amb V HIGH-state ...
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Philips Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter amb HIGH-to-LOW and PHL ...
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Philips Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter amb C power dissipation capacitance MHz [1] All typical values ...
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Philips Semiconductors Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter HIGH-to-LOW and PHL PLH LOW-to-HIGH propagation delay ...
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Philips Semiconductors Test data is given in Table 11. Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance Z ...
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Philips Semiconductors 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. ...
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Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT ...
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Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max ...
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Philips Semiconductors 14. Abbreviations Table 12: Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor Transistor Logic 15. Revision history Table ...
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Philips Semiconductors 16. Legal information 16.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...
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Philips Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...