74aup2g02gt NXP Semiconductors, 74aup2g02gt Datasheet
74aup2g02gt
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74aup2g02gt Summary of contents
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Low-power dual 2-input NOR gate Rev. 01 — 28 August 2006 1. General description The 74AUP2G02 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the ...
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... Ordering information Table 1. Ordering information Type number Package Temperature range Name 74AUP2G02DC +125 C 74AUP2G02GT +125 C 74AUP2G02GM +125 C 4. Marking Table 2. Marking Type number 74AUP2G02DC 74AUP2G02GT 74AUP2G02GM 5. Functional diagram mna716 Fig 1. Logic symbol 6 ...
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Philips Semiconductors 74AUP2G02 GND 4 Transparent top view Fig 5. Pin configuration SOT833-1 (XSON8) 6.2 Pin description Table 3. Pin description Symbol Pin SOT765-1 and SOT833 GND 4 ...
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Philips Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V ...
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Philips Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V HIGH-level input voltage IH V LOW-level input voltage IL V ...
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Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V HIGH-level input voltage IH V LOW-level input voltage IL V ...
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Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +125 C amb V HIGH-level input voltage IH V LOW-level input voltage IL V ...
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Philips Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay nA nY; see pd C ...
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Philips Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions pF and power dissipation ...
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Philips Semiconductors Test data is given in Table 10. Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance Z ...
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Philips Semiconductors 13. Package outline VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2 pin 1 index 1 e DIMENSIONS (mm are the original dimensions ...
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Philips Semiconductors XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) (1) A ...
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Philips Semiconductors XQFN8: plastic extremely thin quad flat package; no leads; 8 terminals; body 1.6 x 1.6 x 0.5 mm terminal 1 index area metal area not for soldering 2 1 terminal 1 index area ...
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Philips Semiconductors 14. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 12. ...
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Philips Semiconductors 16. Legal information 16.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...
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Philips Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...