cbtd16211dl NXP Semiconductors, cbtd16211dl Datasheet - Page 4

• Manufacturer Part Number: cbtd16211dl
• Description: Cbtd16211 24-bit Level Shifting Bus Exchange Switch With 12-bit Output Enables
• Manufacturer: NXP Semiconductors

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1. All typical values are at V
2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch.
Philips Semiconductors
ABSOLUTE MAXIMUM RATINGS
NOTES:
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
NOTES:
2001 Jun 13
SYMBOL
SYMBOL
SYMBOL
SYMBOL
24-bit level shifting bus exchange switch
with 12-bit output enables
C
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 C.
On-state resistance is determined by the lowest voltage of the two (A or B) terminals.
V
T
I
V
V
V
T
I(OFF)
r
OUT
V
V
I
V
I
OUT
amb
C
on
V
CC
I
CC
IK
stg
CC
OH
I
I
IH
CC
IL
IK
I
I
I
3
3
DC supply voltage
DC input diode current
DC input voltage
DC output voltage
DC output current
Storage temperature range
DC supply voltage
High-level input voltage
Low-level Input voltage
Operating free-air temperature range
Input clamp voltage
Output high pass voltage
Input leakage current
Input leakage current
Quiescent supply current
Additional supply current per
input pin
Control pins
Port OFF capacitance
PARAMETER
2
CC
PARAMETER
3
= 5 V, T
3
amb
1, 2
= 25 C.
PARAMETER
PARAMETER
V
See Figure 1
V
V
V
1OE=2OE=GND
V
other inputs at V
V
V
V
V
V
CC
CC
CC
CC
CC
I
O
CC
CC
CC
= 3 V or 0
= 3 V or 0, OE = V
= 4.5 V; I
= 5.5 V; V
= 5.5 V; I
= 5.5 V, one input at 3.4 V,
= 4.5 V; V
= 4.5 V; V
= 4.5 V; V
= 0 V; V
I
TEST CONDITIONS
I
O
= 5.5 V
I
1
1
1
= –18 mA
= GND or 5.5 V
= 0, V
CC
= 0 V; I
= 0 V; I
= 2.4 V; I
or GND
output in Off or High state
I
CC
= V
4
I
I
output in Low state
= 64 mA
= 30 mA
I
CONDITIONS
CC
= –15 mA
or GND;
V
I
< 0
Min
–40
4.5
2.0
—
Min
—
—
—
—
—
—
—
—
—
—
—
T
amb
LIMITS
CC
–0.5 to +7.0
–0.5 to +7.0
–0.5 to +5.5
–65 to +150
= –40 to +85 C
RATING
or GND.
LIMITS
Typ
–50
128
4.5
—
—
—
—
—
—
35
8
5
5
1
Max
+85
5.5
0.8
—
CBTD16211
Max
–1.2
1.5
2.5
10
50
—
—
7
7
1
Product data
UNIT
UNIT
UNIT
mA
mA
V
V
V
V
V
V
C
C
UNIT
mA
mA
pF
pF
V
V
A
A