cbts3257 NXP Semiconductors, cbts3257 Datasheet - Page 4

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cbts3257

Manufacturer Part Number
cbts3257
Description
Cbts3257 Quad 1-of-2 Multiplexer/demultiplexer With Schottky Diode
Manufacturer
NXP Semiconductors
Datasheet
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
2. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
1. All unused control inputs of the device must be held at V
1. All typical values are at V
2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch.
Philips Semiconductors
ABSOLUTE MAXIMUM RATINGS
NOTES:
RECOMMENDED OPERATING CONDITIONS
NOTE:
DC ELECTRICAL CHARACTERISTICS
NOTES:
2002 Sep 27
SYMBOL
SYMBOL
SYMBOL
SYMBOL
C
C
Quad 1-of-2 multiplexer/demultiplexer
with Schottky diode
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
On-state resistance is determined by the lowest voltage of the two (A or B) terminals.
IO(OFF)
T
V
V
O(O
T
r
V
V
V
I
V
V
amb
C
on
V
I
CC
I
CC
stg
CC
I
K
IH
CC
IL
IK
P
I
I
I
3
3
)
DC supply voltage
DC input voltage
Continuous channel current
Input clamp current
Storage temperature range
DC supply voltage
High-level input voltage
Low-level Input voltage
Operating free-air temperature range
Input clamp voltage
Input clamp voltage
Pass voltage
Input leakage current
Quiescent supply current
Additional supply current per input pin
Control pins capacitance
Off capacitance
Off capacitance
On-resistance
PARAMETER
CC
PARAMETER
2
= 5 V, T
A or B inputs
Control inputs
amb
1
= 25 C.
PARAMETER
PARAMETER
A port
B port
2
V
V
V
V
V
V
other inputs at V
V
V
V
V
V
V
CC
CC
I
CC
CC
CC
I
O
O
CC
CC
CC
= 3 V or 0
= V
= 3 V or 0; OE = V
= 3 V or 0; OE = V
or GND to ensure proper device operation.
= 4 5 V; I = 18 mA
= 4.5 V; I
= 5.5 V; V
= 5.5 V; I
= 5.5 V, one input at 3.4 V,
= 4.5 V; V
= 4.5 V; V
= 4.5 V; V
CC
TEST CONDITIONS
= 5.0 V; I/O = –100 mA
4
I
O
I
I
I
= –18 mA
I
= GND or 5.5 V
= 0, V
= 0V; I
= 0V; I
CONDITIONS
CC
= 2.4 V; I
V
or GND
I/O
I
CC
CC
I
I
= V
= 64 mA
= 30 mA
< 0
I
CC
= 15 mA
or GND
MIN
3.4
MIN
T
–40
4.5
2.0
amb
CC
–0.5 to +7.0
–0.5 to +7.0
–65 to +150
= –40 to +85 C
RATING
LIMITS
or GND
LIMITS
TYP
128
–50
3.6
3.3
9.9
6.4
10
5
5
1
CBTS3257
MAX
+85
5.5
0.8
MAX
–0.8
–1.2
3.9
2.5
15
3
7
7
1
Product data
UNIT
mA
mA
V
V
C
UNIT
UNIT
UNIT
mA
pF
pF
pF
V
V
V
V
V
V
C
A
A

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