is42s16100-7tli Integrated Silicon Solution, Inc., is42s16100-7tli Datasheet - Page 5

• Manufacturer Part Number: is42s16100-7tli
• Description: 512k Words X 16 Bits X 2 Banks 16-mbit Synchronous Dynamic Ram
• Manufacturer: Integrated Silicon Solution, Inc.

IS42S16100
DC RECOMMENDED OPERATING CONDITIONS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
ABSOLUTE MAXIMUM RATINGS
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
01/28/08
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
V
Symbol
V
V
V
V
P
I
T
T
cs
ih
Symbol
opr
stg
out
iN
iN
dd max
ddq max
iN
d max
dd
(max) = V
1
2
V
V
, V
ih
il
ddq
ddq
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: DQ0-DQ15
+ 2.0V with a pulse width ≤ 3 ns.
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
(4)
(3)
(1)
(1,2)
Min.
-0.3
3.0
2.0
(At T
a
= 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
Typ.
3.3
—
—
(2)
(
At T
V
dd
Max.
a
+0.8
3.6
= 0 to +70°C)
+ 0.3
Com
Ind.
Unit
V
V
V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–55 to +150 °C
-40 to +85
0 to +70
Rating
50
Typ.
1
—
—
—
Unit
W
mA
°C
°C
Max.
4
4
5
Unit
pF
pF
pF
5