is42s16400b1 Integrated Silicon Solution, Inc., is42s16400b1 Datasheet - Page 11

• Manufacturer Part Number: is42s16400b1
• Description: 1 Meg Bits X 16 Bits X 4 Banks 64-mbit Synchronous Dynamic Ram - Integrated Silicon Solution, Inc
• Manufacturer: Integrated Silicon Solution, Inc.

IS42S16400B1
DC RECOMMENDED OPERATING CONDITIONS
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. A
12/09/03
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
V
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CS
Symbol
OPR
STG
DD
DD MAX
DDQ MAX
IN
OUT
D MAX
IN1
IN2
V
V
, V
IH
IL
DDQ
Parameter
Input Capacitance: A0-A11, BA0, BA1
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
(1)
Min.
(1,2)
-0.3
3.0
2.0
(At T
Com.
A
1-800-379-4774
Typ.
= 0 to +25°C, V
3.3
—
—
(2)
(
At T
V
DD
Max.
+0.8
3.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
A
–55 to +150
+ 0.3
= 0 to +70°C)
0 to +70
Rating
DD
50
1
= V
Unit
DDQ
V
V
V
= 3.3 ± 0.3V, f = 1 MHz)
Unit
mA
°C
°C
W
Typ.
V
V
V
V
—
—
—
Max.
4
4
5
ISSI
Unit
pF
pF
pF
11
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