cy62127dv18 Cypress Semiconductor Corporation., cy62127dv18 Datasheet - Page 6

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cy62127dv18

Manufacturer Part Number
cy62127dv18
Description
1m 64k X 16 Static Ram Semiconductor
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Switching Characteristics
Document #:
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
Notes:
8. Test conditions assume signal transition time of 3 ns or less, timing reference levels of V
specified I
9. At any given temperature and voltage condition, t
given device.
10. If both byte enables are toggled together, this value is 10 ns.
11. t
12. The internal Write time of the memory is defined by the overlap of
Write and any of these signals can terminate a Write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that
terminates the Write.
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
BW
SD
HD
HZWE
LZWE
Parameter
HZOE
[10]
, t
OL
HZCE
/I
OH
[12]
38-05226
, t
and 30-pF load capacitance.
HZBE
, and t
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
OE LOW to Data Valid
OE LOW to Low-Z
OE HIGH to High-Z
CE
CE
CE
CE
BLE/BHE LOW to Data Valid
BLE/BHE LOW to Low-Z
BLE/BHE HIGH to High-Z
Write Cycle Time
CE
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
BLE/BHE LOW to Write End
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z
WE HIGH to Low-Z
1
1
1
1
1
1
Rev.
HZWE
LOW or CE
LOW or CE
HIGH or CE
LOW or CE
HIGH or CE
LOW or CE
transitions are measured when the outputs enter a high-impedance state.
**
Description
(Over the Operating Range)
2
2
2
2
2
2
HIGH to Data Valid
HIGH to Low-Z
HIGH to Power-up
HIGH to Write End
[9]
LOW to High-Z
LOW to Power-down
[9,11]
[9,11]
[9]
HZCE
[9]
[9,11]
is less than t
INFORMATION
[9]
[9,11]
LZCE
ADVANCE
WE, CE
, t
HZBE
1
[8]
= V
is less than t
IL
, BHE and/or BLE = V
Min.
55
10
10
55
45
45
40
45
25
10
5
0
5
0
0
0
CC(typ.)/2
CY62127DV18-55
LZBE
, t
, input pulse levels of 0 to V
HZOE
is less than t
IL
, CE
2
Max.
= V
55
55
25
20
20
55
55
20
20
IH
LZOE
. All signals must be ACTIVE to initiate a
, and t
CY62127DV18
CC(typ.)
HZWE
, and output loading of the
is less than t
MoBL2
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Page 6 of 13
LZWE
for any
®

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