cy62147ev30 Cypress Semiconductor Corporation., cy62147ev30 Datasheet - Page 12

• Manufacturer Part Number: cy62147ev30
• Description: 4-mbit 256k X 16 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Document #: 38-05440 Rev. *E
Document History Page
Document Title: CY62147EV30 MoBL
Document Number: 38-05440
REV.
*A
*B
*C
*D
*E
**
ECN NO. Issue Date
1045701
201861
247009
414807
464503
925501
See ECN
See ECN
See ECN
See ECN
See ECN
01/13/04
Change
Orig. of
®
NXR
SYT
ZSD
VKN
VKN
AJU
4-Mbit (256K x 16) Static RAM
New Data Sheet
Changed from Advanced Information to Preliminary
Changed I
Changed typo in Data Retention Characteristics(t
Changed t
18 ns for 45 ns Speed Bin
Changed t
2.5 µA to 7 µA.
Changed I
Added I
Changed AC test load capacitance from 50 pF to 30 pF on Page #4.
Changed t
Changed t
Changed t
Included Automotive Range in product offering
Moved Product Portfolio to Page 2
Changed Vcc stabilization time in footnote #8 from 100 µs to 200 µs
Removed Footnote #15(t
Changed t
for 45 ns Speed Bin
Changed t
ns Speed Bin
Changed t
45 ns Speed Bin
Changed t
Changed Ordering Information to include Pb-Free Packages
Changed from Preliminary information to Final
Changed the address of Cypress Semiconductor Corporation on Page #1
from “3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62147EV30
Changed ball E3 from DNU to NC.
Removed redundant foot note on DNU.
Changed I
1.5 mA to 2 mA at f=1 MHz
Changed I
Changed I
Changed t
Changed t
Updated the package diagram 48-pin VFBGA from *B to *D
Updated the ordering information table and replaced the Package Name
column with Package Diagram.
Updated the Ordering Information
Added Preliminary Automotive-A information
Added footnote #9 related to I
Added footnote #14 related AC timing parameters
Converted Automotive-A and Automotive -E specs from preliminary to final
CCDR
HZOE
SCE
SB1
CCDR
OHA
HZCE
SD
DOE
CC
CC
CCDR
LZOE
LZCE
HZCE
PWE
SD
from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
typical value.
from 22 ns to 25 ns.
(Max) value from 2 mA to 2.5 mA and I
(Typ) value from 12 mA to 15 mA at f = f
and I
and t
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
from 15 to 18 ns for 35 ns Speed Bin
, t
from 30 ns to 35 ns.
, t
from 3 ns to 5 ns
from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45
from 22 ns to 18 ns
from 2.0 µA to 2.5 µA
from 2.5 µA to 7 µA.
LZBE
HZBE
SB2
BW
, t
and t
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns
Typ values from 0.7 µA to 1 µA and Max values from
HZWE
LZBE
Description of Change
LZWE
) from Previous Revision
from 12 to 15 ns for 35 ns Speed Bin and 15 to
SB2
from 6 ns to 10 ns
and I
CY62147EV30 MoBL
CCDR
R
) from 100 µs to t
CC
max
(Typ) value from
Page 12 of 12
RC
ns
®
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