cy62147ev30 Cypress Semiconductor Corporation., cy62147ev30 Datasheet - Page 4

• Manufacturer Part Number: cy62147ev30
• Description: 4-mbit 256k X 16 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Document #: 38-05440 Rev. *E
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Over the Operating Range
Data Retention Waveform
Notes
V
I
t
t
10. Full device operation requires linear V
11. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.
Parameter
CCDR
CDR
R
Parameter
DR
[10]
Θ
Θ
BHE.BLE
[9]
[8]
JC
JA
CE or
OUTPUT
Parameters
V
CC
V
INCLUDING
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
R
V
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
CC
R1
R2
CC
TH
TH
JIG AND
SCOPE
for Data Retention
30 pF
Description
R1
Description
[9]
CC
[11]
R2
ramp from V
Equivalent to: THEVENIN EQUIVALENT
V
Still Air, soldered on a 3 × 4.5 inch, two-layer
printed circuit board
t
CC(min)
Figure 1. AC Test Load and Waveforms
CDR
16667
15385
2.50V
OUTPUT
Figure 2. Data Retention Waveform
8000
DR
1.20
to V
CC(min)
Rise Time = 1 V/ns
V
V
CC
IN
Test Conditions
= 1.5V, CE > V
> V
> 100 µs or stable at V
V
CC
CC
DATA RETENTION MODE
GND
– 0.2V or V
R
TH
V
DR
10%
CC
Conditions
> 1.5V
– 0.2V,
IN
CC(min)
V
< 0.2V
ALL INPUT PULSES
1554
1103
3.0V
1.75
645
90%
> 100 µs.
Ind’l/Auto-A
Auto-E
Package
VFBGA
CY62147EV30 MoBL
75
10
V
CC(min)
90%
t
10%
R
Fall Time = 1 V/ns
Min Typ
1.5
t
RC
0
Package
TSOP II
77
13
0.8
Unit
Ω
Ω
Ω
V
[2]
Page 4 of 12
Max Unit
12
7
°C/W
°C/W
Unit
µA
ns
ns
V
®
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