cy62157e Cypress Semiconductor Corporation., cy62157e Datasheet - Page 4

• Manufacturer Part Number: cy62157e
• Description: 8-mbit 512k X 16 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Document #: 38-05695 Rev. *C
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Notes:
10. Full device operation requires linear V
11. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
Θ
Θ
V
I
t
t
Parameter
CCDR
CDR
R
Parameter
DR
JA
JC
[10]
[9]
BHE.BLE
CE
OUTPUT
V
CE
1
CC
or
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
2
INCLUDING
V
CC
CC
JIG AND
SCOPE
for Data Retention
Parameters
Description
Description
30 pF
R
V
R1
R2
TH
TH
[9]
R1
CC
[11]
ramp from V
R2
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
V
(Over the Operating Range)
V
CE
CC(min)
t
CDR
CC
2
DR
=2V, CE
< 0.2V, V
to V
CC(min)
Equivalent to:
1
> V
IN
Rise Time = 1 V/ns
> 100 µs or stable at V
> V
CC
DATA RETENTION MODE
OUTPUT
CC
Test Conditions
– 0.2V,
Conditions
– 0.2V or V
GND
3V
V
DR
Values
THEVENIN EQUIVALENT
1800
> 2 V
1.77
990
639
10%
CC(min)
IN
< 0.2V
> 100 µs.
ALL INPUT PULSES
R
90%
TH
Industrial
Automotive
V
V
CY62157E MoBL
CC(min)
t
R
Min
t
RC
90%
2
0
TSOP II VFBGA
10%
77
13
Fall Time = 1 V/ns
Typ
Unit
[4]
Ω
Ω
Ω
V
8.86
72
Page 4 of 12
Max
30
8
°C/W
°C/W
Unit
Unit
µA
ns
ns
V
®
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