lh28f004su-z9 Sharp Microelectronics of the Americas, lh28f004su-z9 Datasheet - Page 19

• Manufacturer Part Number: lh28f004su-z9
• Description: Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

4M (512K × 8) Flash Memory
DC Characteristics
SYMBOL
V
I
I
I
I
I
I
CCR
CCR
I
CCES
I
I
CCW
I
CCS
CCD
CCE
PPD
CC
PPS
I
LO
IL
1
2
= 3.3 V ± 0.3 V, T
Input Load Current
Output Leakage Current
V
V
Current
V
V
V
V
Current
V
Current
V
V
Current
CC
CC
CC
CC
CC
CC
CC
PP
PP
Standby Current
Deep Power-Down
Standby Current
Deep Power-Down
Read Current
Read Current
Write Current
Block Erase
Erase Suspend
PARAMETER
A
= 20°C to +85°C
TYP.
0.3
0.2
0.2
4
9
8
6
3
MIN.
MAX.
±10
±10
±1
15
35
20
12
16
4
8
6
8
UNITS
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
CE
V
CE
RP
V
CMOS: CE
Inputs = GND ±0.2 V or V
TTL: CE
Inputs = V
f = 8 MHz, I
V
CMOS: CE
Inputs = GND ±0.2 V or V
TTL: CE
Inputs = V
f = 4 MHz, I
Byte/Two-Byte Serial Write
in Progress
Block Erase in Progress
CE
Block Erase Suspended
RP
V
V
V
CC
CC
CC
CC
CC
CC
PP
»
, RP
»
, RP
»
»
»
= GND ±0.2 V
= V
= GND ±0.2 V
= V
= V
= V
= V
= V
= V
V
IH
»
»
CC
CC
CC
CC
CC
CC
CC
»
»
TEST CONDITIONS
= V
= V
= V
= V
IL
IL
»
»
MAX., V
MAX., V
MAX.,
MAX.,
MAX.,
MAX.,
OUT
OUT
= GND ±0.2 V
= GND ±0.2 V
CC
IH
or V
or V
IL
IL
±0.2 V
= 0 mA
= 0 mA
IH
IH
IN
IN
= V
= V
CC
CC
CC
CC
LH28F004SU-Z9
±0.2 V
±0.2 V
or GND
or GND
NOTE
1, 3,
1, 3,
1, 4
1, 2
1
1
1
4
4
1
1
1
1
19