lh28f004su-z9 Sharp Microelectronics of the Americas, lh28f004su-z9 Datasheet - Page 20

• Manufacturer Part Number: lh28f004su-z9
• Description: Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

LH28F004SU-Z9
DC Characteristics (Continued)
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
2. I
3. Automatic Power Saving (APS) reduces I
4. CMOS Inputs are either V
5. In 2.7 V < V
6. V
20
SYMBOL
V
product versions (package and speeds).
I
I
V
V
V
V
V
I
CCES
CCES
I
I
PPES
V
PPW
V
PPL
PPR
PPE
V
CC
OH
OH
PPH
LKO
PPL
OL
IH
IL
1
2
in read is V
= 3.3 V ± 0.3 V, T
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
and I
V
V
V
V
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Operations
V
Operations
V
Lock Voltage
CCR
CC
PP
PP
PP
PP
PP
PP
CC
< 3.0 V operation, TTL-level input of RP
.
Read Current
Write Current
Erase Current
Erase Suspend
during Normal
during Write/Erase
Erase/Write
CC
PARAMETER
- 0.2 V < V
CC
A
= -20°C to +85°C
± 0.2 V or GND ± 0.2 V. TTL Inputs are either V
PPL
< 5.5 V or GND < V
CCR
TYPE
5.0
15
20
to less than 1 mA in Static operation.
V
CC
MIN.
-0.3
PPL
2.4
0.0
1.4
2.0
4.5
»
is V
- 0.2
< GND + 0.2 V.
IL
(MAX.) = 0.6 V.
V
CC
MAX.
CC
200
200
0.8
0.4
5.5
5.5
35
40
+ 0.3
= 3.3 V, V
IL
UNITS
or V
mA
mA
PP
µA
µA
V
V
V
V
V
V
V
V
= 5.0 V, T = 25°C. These currents are valid for all
IH
.
V
Serial Write in Progress
V
Block Erase in Progress
V
Block Erase Suspended
V
I
I
V
I
V
V
OL
OH
OH
PP
PP
PP
PP
CC
CC
CC
= 4 mA
= -2 mA
= 100 µA
> V
= V
= V
= V
= V
= V
= V
TEST CONDITIONS
CC
PPH
PPH
PPH
CC
CC
CC
4M (512K × 8) Flash Memory
MIN. and
MIN.
MIN.
, Byte/Two-Byte
,
,
NOTE
1
1
1
1
6
5