lh28f016sc-l Sharp Microelectronics of the Americas, lh28f016sc-l Datasheet - Page 33

• Manufacturer Part Number: lh28f016sc-l
• Description: M-bit Smartvoltage Flash Memories
• Manufacturer: Sharp Microelectronics of the Americas

6.2.5 AC CHARACTERISTICS - WRITE OPERATION
NOTES :
1. Read timing characteristics during block erase, byte write
2. Sampled, not 100% tested.
SYMBOL
SYMBOL
•
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHGL
AVAV
PHWL
ELWL
WLWH
PHHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
V
CC
CC
and lock-bit configuration operations are the same as
during read-only operations. Refer to Section 6.2.4 "AC
CHARACTERISTICS" for read-only operations.
= 2.7 to 3.6 V, T
= 3.3±0.3 V, T
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
Write Recovery before Read
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
PP
PP
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
HH
HH
Setup to WE# Going High
Hold from Valid SRD, RY/BY# High
A
= 0 to +70˚C or –40 to +85
A
= 0 to +70
PARAMETER
PARAMETER
VERSIONS
VERSIONS
˚
C or –40 to +85
˚
C
˚
C
- 33 -
NOTE
NOTE
2, 4
2, 4
2
3
3
2
2
2
3
3
3. Refer to Table 3 for valid A
4. V
(NOTE 1)
byte write, or lock-bit configuration.
should be held at V
byte write, or lock-bit configuration success (SR.1/3/4/5 = 0).
LH28F016SCH-L95
LH28F016SCH-L95
PP
LH28F016SC-L95
LH28F016SC-L95
MIN.
MIN.
150
120
100
100
10
50
50
50
10
30
10
50
50
50
10
30
1
5
5
0
1
5
5
0
0
0
should be held at V
MAX.
MAX.
100
HH
) until determination of block erase,
PPH1/2/3
LH28F016SC-L/SCH-L
LH28F016SCH-L12 UNIT
LH28F016SCH-L12 UNIT
LH28F016SC-L12
LH28F016SC-L12
MIN.
MIN.
170
150
100
100
IN
10
50
50
50
10
30
10
50
50
50
10
30
1
5
5
0
1
5
5
0
0
0
and D
(and if necessary RP#
IN
for block erase,
MAX.
MAX.
100
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns