lh28f400su-nc Sharp Microelectronics of the Americas, lh28f400su-nc Datasheet - Page 21

• Manufacturer Part Number: lh28f400su-nc
• Description: 512k 256k Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

4M (512K × 8, 256K × 16) Flash Memory
DC Characteristics
SYMBOL
V
I
I
I
I
I
I
CCR
CCR
I
CCES
I
I
CCW
CCS
CCD
CCE
I
PPS
PPD
CC
I
LO
IL
1
2
= 5.0 V ± 0.5 V, T
Input Load Current
Output Leakage Current
V
V
Current
V
V
V
V
V
Current
V
V
Current
CC
CC
CC
CC
CC
CC
CC
PP
PP
Standby Current
Deep Power-Down
Block Erase Current
Standby Current
Deep Power-Down
Read Current
Read Current
Write Current
Erase Suspend
PARAMETER
A
= 0°C to +70°C
TYP.
0.2
0.2
16
18
18
±1
5
1
5
MIN.
MAX.
±10
±10
±1
10
60
30
35
25
10
4
5
5
UNITS
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
CE
BYTE = V
V
CE
BYTE = V
RP
V
CMOS: CE
BYTE = GND ±0.2 V or V
Inputs = GND ±0.2 V or V
TTL: CE
BYTE = V
Inputs = V
f = 10 MHz, I
V
CMOS: CE
BYTE = V
Inputs = GND ±0.2 V or V
TTL: CE
BYTE = V
Inputs = V
f = 5 MHz, I
CE
Block Erase Suspended
RP
V
V
Word/Byte Write in Progress
Block Erase in Progress
V
CC
CC
CC
CC
CC
CC
PP
»
, RP
»
, RP
»
»
= V
»
= GND ±0.2 V
= GND ±0.2 V
= V
= V
= V
= V
= V
= V
V
IH
CC
»
»
CC
CC
CC
CC
CC
CC
»
= V
»
= V
= V
= V
TEST CONDITIONS
IL
IL
CC
IH
IL
CC
IH
»
= GND ±0.2 V
»
= GND ±0.2 V
MAX., V
MAX., V
MAX.,
MAX.,
MAX.,
MAX.,
OUT
IL,
IL,
CC
IH
or V
or V
or V
or V
or V
OUT
±0.2 V or GND ±0.2 V
±0.2 V or GND ±0.2 V
±0.2 V
= 0 mA
IH
IH
IH
IL
IL
= 0 mA
,
IN
IN
= V
= V
CC
CC
CC
CC
CC
LH28F400SU-NC
±0.2 V
or GND
or GND
±0.2 V
±0.2 V
1, 3, 4
1, 3, 4
NOTE
1, 4
1, 2
1
1
1
1
1
1
1
21